Advance Product Information
23 - 29 GHz High Power Amplifier
TGA1088-EPU
Key Features and Performance
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0.25um pHEMT Technology
23 GHz - 29 GHz Frequency Range
Nominal 1 Watt (28GHz) @ P1dB
Nominal Gain of 23 dB
OTOI 38 dBm typical (Linear Mode)
Bias 7V @ 400 mA Idq (Sat Power mode)
Bias 7V @ 650 mA Idq (Linear mode)
Chip Dimensions 4.115mm x 3.047mm
Primary Applications
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LMDS
The TriQuint TGA188-EPU is a three stage
HPA MMIC design using TriQuint’s proven
0.25 um Power pHEMT process to support a variety
of millimeter wave applications including
Point-to-Point Radio
TGA 1088 Typical Small Signal Gain
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point-to-point digital radio, LMDS/LMCS and
Ka-band satellite spacecraft and ground terminals.
The three stage design consists of a 400 um input
device driving a pair of 600 um interstage devices
followed by four 600 um output devices. The device
is identical to TriQuint’s TGA9070 with the exception
of additional bias circuitry that allows the flexibility to
operate in two different modes. The high saturated
power mode will give identical performance to the
TGA9070. The high linearity mode will provide 2-3dB
improvement in OTOI performance over the TGA9070.
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31
Frequency (GHz)
TGA 1088 Typical Saturated Output Power
Biased in High Saturated Power Mode
The TGA1088 provides greater than 1W of
output power across 23-29 GHz with a typical
PAE of 35%. Typical small signal gain is 23 dB.
The device may be biased for either high saturated
power or high linearity via bond wire jumpers.
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The TGA188 requires minimum off-chip
components. Each device is 100% DC and RF
tested on-wafer to ensure performance compliance.
The device is available in chip form.
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Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
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TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com