Datasheet > TGA1135B-SCC

TGA1135B-SCC

更新时间： 2024-11-09 03:27:55

品牌	Logo	应用领域
TRIQUINT		放大器射频微波功率放大器
页数	文件大小	规格书
10页	1102K
描述
18-27 GHz 1W Power Amplifier

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TGA1135B-SCC 数据手册

Product Datasheet

January 21, 2002

18-27 GHz 1W Power Amplifier

TGA1135B-SCC

Key Features

•

0.25 um pHEMT Technology

14 dB Nominal Gain at 23GHz

29 dBm Nominal P1dB

37dBm OTOI typical

Typical 15dB Input/Output RL

Bias 6 - 7V @ 480 mA

On-chip power detector diode

Primary Applications

Chip Dimensions 2.641 mm x 1.480 mm

•

Point-to-Point Radio

Point-to-Multipoint Communications

Ka Band Sat-Com

Product Description

The TriQuint TGA1135B-SCC is a balanced two-

stage HPA MMIC design using TriQuint’s proven

0.25 um Power pHEMT process. The

TGA1135B Fixtured Amplifier Typical Small Signal Data

Wafer 993150303, 6V/540mA

TGA11135B is designed to support a variety of

millimeter wave applications including point-to-

point digital radio and LMDS/LMCS.

The balanced configuration two stage design

consists of a pair of 600um input devices driving a

4 x 600um output stage. Power combining is

achieved with on-chip Lange couplers.

-2

-4

-6

The TGA1135B-SCC provides 29 dBm nominal

output power at 1dB compression across

18 - 27GHz. Typical small signal gain is 14 dB

across the band. Input and output return loss is

typically -15dB.

13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32

Frequency (GHz)

TGA1135B Nominal Output Power

Wafer 993150303, Idq=540mA

An on-chip power detector and reference diode

may be used for power monitoring/control and

bias control loops.

31.5

VD = 7V

30.5

VD = 6V

The TGA1135B-SCC requires minimum off-chip

components. Each device is 100% DC and RF

tested on-wafer to ensure performance

29.5

Note: 1 dB of

compression not

reached on some parts

at 27, 27.5 GHz

28.5

compliance. The device is available in chip form.

27.5

Frequency (GHz)

TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com

12 3 4 5 6 7...10

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