Datasheet > TG2014CS

TG2014CS

更新时间： 2024-09-14 19:53:15

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器射频微波功率放大器
页数	文件大小	规格书
6页	215K
描述
RF/Microwave Amplifier, RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER

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中文翻译

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技术参数
数据手册

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TG2014CS 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.72	射频/微波设备类型：	NARROW BAND MEDIUM POWER
Base Number Matches：	1

TG2014CS 数据手册

TG2014CS

TOSHIBA RF Power Amplifier

TG2014CS

1700/1900 MHz Band Amplifier Applications (US/K-PCS (CDMA))

•

GaAs HBT MMIC (Include Bias circuit type)

Output Power: P = 28.0 dBmW (min)

Gain: G = 24 dB (min)

Drain Efficiency: 37% (typ.)

Include bias circuit with power control

Maximum Ratings (Ta = 25°C )

Characteristic

Supply voltage

Symbol

Rating

Unit

4.5

1.5

Collector current

Input power

dBmW

Power dissipation

(Note 1)

Channel temperature

Operating temperature

Storage temperature range

150

°C

−30~85

−40~150

°C

ope

°C

stg

Note 1: Ta = 25°C

2001-11-06

12 3 4 5 6

中文翻译

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