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TG2016SBN16.8000M-TCGNBM0 PDF预览

TG2016SBN16.8000M-TCGNBM0

更新时间: 2024-11-06 10:47:07
品牌 Logo 应用领域
精工 - SEIKO /
页数 文件大小 规格书
2页 645K
描述
Clipped Sine Output Oscillator,

TG2016SBN16.8000M-TCGNBM0 数据手册

 浏览型号TG2016SBN16.8000M-TCGNBM0的Datasheet PDF文件第2页 
Crystal oscillator  
Product Number (Please contact us)  
TG2016SBN : X1G004691xxxx00  
TG2520SBN : X1G005151xxxx00  
TCXO/VC-TCXO  
HIGH STABILITY  
TG2016SBN  
/
TG2520SBN  
Output frequency  
Supply voltage  
:
:
13 MHz to 55MHz  
1.8 V Typ./ 2.8 V Typ./ 3.0 V Typ./ 3.3 V Typ.  
Frequency / temperature characteristics  
TG2016SBN  
(2.0 × 1.6 × 0.73 mm) (2.5 × 2.0 × 0.8 mm)  
TG2520SBN  
:
:
±0.5 × 10-6 Max. (-40 °C to +85 °C)  
±2.0 × 10-6 Max. (-40 °C to +85 °C)  
External dimensions: 2.0 × 1.6 × 0.73 mm / 2.5 × 2.0 × 0.8 mm  
Actual size  
Applications  
:
GPS, RF  
TG2016SBN  
TG2520SBN  
Wireless communication devices  
(CDMA, WCDMA, LTE, WiMAX, other)  
High stability, Low noise  
Features  
:
Specifications (characteristics)  
Item  
Symbol  
VC-TCXO  
TCXO  
Conditions / Remarks  
13 MHz to 55MHz  
16 MHz, 16.368 MHz, 16.369 MHz, 16.384 MHz, 16.8 MHz,  
19.2 MHz, 20 MHz, 26 MHz, 27MHz, 28.974 MHz, 30 MHz, Standard frequency  
32 MHz, 37.4 MHz, 38.4 MHz, 39 MHz and 40 MHz  
Output frequency range  
f0  
Supply voltage  
V
CC  
1.8 V ±0.1 V / 2.8 V ±5 % / 3.0 V ±5 % / 3.3 V ±5 %  
-40 °C to +90 °C  
Supply voltage range :1.7 V to 3.63 V  
Storage as single product.  
Storage temperature  
Operating temperature  
Frequency tolerance  
Frequency/temperature  
characteristics  
T_stg  
T_use  
f_tol  
G: -40 °C to +85 °C  
±1.5 × 10-6 Max.  
After reflow, +25 °C  
C: ±0.5 × 10-6 Max. / G: -40 °C to +85 °C  
F: ±2.0 × 10-6 Max. / G: -40 °C to +85 °C  
±0.1 × 10-6 Max.  
f
0
-T  
C
Standard stability version  
10 k// 10 pF ±10 %  
Frequency/load coefficient  
Frequency/voltage coefficient  
f0  
f
-Load  
0
-VCC  
±0.1 × 10-6 Max.  
V
CC ± 5 %  
+25 °C, First year, 13 MHzf  
+25 °C ,First year, 40 MHz< f  
±0.5 × 10-6 Max.  
0
40 MHz  
Frequency aging  
f_age  
±1.5 × 10-6 Max.  
0 55 MHz  
1.2 mA Max.  
1.4 mA Max.  
1.5 mA Max.  
1.8 mA Max.  
2.0 mA Max.  
2.2 mA Max.  
13 MHzf  
16 MHzf  
27 MHz< f  
36 MHz< f  
40 MHz< f  
52 MHz< f  
0
<16 MHz  
27 MHz  
36 MHz  
40 MHz  
52 MHz  
55 MHz  
0
0
0
0
0
Current consumption  
ICC  
Input resistance  
Rin  
500 kMin.  
±8.0 × 10-6 to ±12.0 × 10-6  
Positive polarity  
-
-
-
VC - GND (DC)  
B: V  
C: V  
D: V  
C
=0.9 V ±0.6 V (VCC =1.8 V) or  
=1.4 V ±1.0 V (VCC =2.8 V) or  
=1.5 V ±1.0 V (VCC =3.0 V) or  
=1.65 V ±1.0 V (VCC =3.3 V)  
C
C
Frequency control range  
f_cont  
E: V  
C
Frequency change polarity  
Symmetry  
Output voltage  
Start-up time  
-
SYM  
45 % to 55 %  
GND level (DC cut)  
Peak to Peak  
T=0 at 90% Vcc  
V
PP  
0.8 V Min.  
1.0 ms Max.  
10 kΩ  
t_str  
Load_R  
Load_C  
Output load condition  
DC cut capacitor = 0.01 µF  
10 pF  
* Note : Please contact us for requirements not listed in this specification.  
ꢃSupply voltage[Vcc] ,Vc function[Vc] (Symbol table)  
Voltage [V]  
TCXO  
VC-TCXO  
Product Name  
(Standard form)  
TG2016 SBN 26.000000MHz  
T
C
G
N
N M  
ꢃVcc  
(Typ.)  
ꢇVc  
T: 1.8  
to 3.3  
T: 1.8  
to 3.3  
K: 2.5  
P: 2.6  
to 3.3  
M: 2.8  
to 3.3  
ꢃ ꢄ ꢅ  
ꢆ ꢇ ꢈ  
to 3.3  
Model(TG2016, TG2520)  
Output (S: Clipped sine wave) Frequency  
ꢃSupply voltage (Refer to symbol table)  
N: Non  
B: 0.9  
C: 1.4  
D: 1.5  
E: 1.65  
(Typ.)  
Frequency / temperature characteristics (C: ±0.5 × 10-6 Max., F: ±2.0 × 10-6 Max.)  
Operating temperature (G: -40 °C to +85 °C) OE function (N: Non) V  
Internal identification code (“L”, “M”, “H” is default)  
C function(Refer to symbol table , A: VC =any)  
External dimensions  
(Unit:mm)  
Footprint (Recommended)  
(Unit:mm)  
2.5±0.2  
B
TG2016SBN  
TG2520SBN  
2.0±0.15  
Marking  
Marking  
Size  
A
B
C
D
TG2016SBN  
(2.0x1.6mm)  
0.75  
TG2520SBN  
(2.5x2.0mm)  
#1  
#2  
1.58±0.1  
C0.15  
0.5±0.1  
1.0  
0.8  
1.4  
2.1  
#1  
#2  
D
Pin map  
Pin  
0.6  
1.13  
1.65  
Connection  
VC-TCXO  
TCXO  
N.C.  
C0.20  
#4  
#3  
1
2
3
4
VC  
1.2±0.1  
To maintain stable operation, provide a 0.01uF to 0.1uF by-pass  
capacitor at a location as near as possible to the power source  
terminal of the crystal product (between VCC - GND).  
GND  
OUT  
#4  
#3  
(0.55)  
1.5±0.1  
VCC  

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