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TF447-01Q PDF预览

TF447-01Q

更新时间: 2024-09-15 19:04:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极
页数 文件大小 规格书
2页 209K
描述
SILICON CONTROLLED RECTIFIER,100V V(DRM),470A I(T),TO-200AB

TF447-01Q 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
标称电路换相断开时间:7 µs关态电压最小值的临界上升速率:200 V/us
最大直流栅极触发电流:200 mA最大直流栅极触发电压:3 V
最大漏电流:25 mA通态非重复峰值电流:5000 A
最大通态电流:470000 A最高工作温度:125 °C
最低工作温度:-45 °C断态重复峰值电压:100 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
触发设备类型:SCRBase Number Matches:1

TF447-01Q 数据手册

 浏览型号TF447-01Q的Datasheet PDF文件第2页 

与TF447-01Q相关器件

型号 品牌 获取价格 描述 数据表
TF447-01W STMICROELECTRONICS

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SILICON CONTROLLED RECTIFIER,100V V(DRM),470A I(T),TO-200AB
TF447-01X STMICROELECTRONICS

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SILICON CONTROLLED RECTIFIER,100V V(DRM),470A I(T),TO-200AB
TF447-01Z STMICROELECTRONICS

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SILICON CONTROLLED RECTIFIER,100V V(DRM),470A I(T),TO-200AB
TF447-02Z STMICROELECTRONICS

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SILICON CONTROLLED RECTIFIER,200V V(DRM),470A I(T),TO-200AB
TF4-47047015% VISHAY

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General Purpose Inductor, 470uH, 15%, 1 Element
TF447-04B STMICROELECTRONICS

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SILICON CONTROLLED RECTIFIER,400V V(DRM),470A I(T),TO-200AB
TF447-04Y STMICROELECTRONICS

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SILICON CONTROLLED RECTIFIER,400V V(DRM),470A I(T),TO-200AB
TF447-04Z STMICROELECTRONICS

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SILICON CONTROLLED RECTIFIER,400V V(DRM),470A I(T),TO-200AB
TF447-06Y STMICROELECTRONICS

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SILICON CONTROLLED RECTIFIER,600V V(DRM),470A I(T),TO-200AB
TF447-08B STMICROELECTRONICS

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SILICON CONTROLLED RECTIFIER,800V V(DRM),470A I(T),TO-200AB