Datasheet > TF252C-4

TF252C-4

更新时间： 2024-10-16 05:53:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	55K
描述
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, ULTRA SMALL, TSSFP, 3 PIN

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技术参数
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TF252C-4 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.83
FET 技术：	JUNCTION	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.1 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

TF252C-4 数据手册

Ordering number : ENA0897

TF252C

SANYO Sem iconductors

DATA S HEET

N-channel Silicon Junction FET

TF252C

Electret Condenser Microphone

Applications

Features

• High gain : G =1.0dB typ (V =2V, R =2.2kΩ, Cin=5pF, V =10mV, f=1kHz).

CC IN

• Ultrasmall package facilitates miniaturization in end products.

• Best suited for use in Electret Condenser Microphone for audio equipments and telephones.

• Excellent voltage characteristics.

• Excellent transient characteristics.

• Adoption of FBET process.

• Halogen free compliance.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Gate-to-Drain Voltage

Symbol

Conditions

Ratings

Unit

GDO

--20

Gate Current

°C

Drain Current

Allowable Power Dissipation

Junction Temperature

Storage Temperature

Marking: D

100

150

Tstg

--55 to +150

°C

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

equipment.

's products or

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

80107GB TI IM TC-00000786

No. A0897-1/4

12 3 4

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与TF252C-4相关器件

型号	品牌	获取价格	描述	数据表
TF252C-5	ONSEMI	获取价格	TRANSISTOR,JFET,N-CHANNEL,210UA I(DSS),EMD3VAR
TF252TH	SANYO	获取价格	N-channel Silicon Junction FET Electret Condenser Microphone
TF252TH_12	SANYO	获取价格	Electret Condenser Microphone Applications
TF252TH-4-TL-H	ONSEMI	获取价格	N-Channel JFET, 20V, 140 to 350µA, 1
TF253	TAITRON	获取价格	2.5A Fast Recovery Rectifier
TF254	TAITRON	获取价格	2.5A Fast Recovery Rectifier
TF255	TAITRON	获取价格	2.5A Fast Recovery Rectifier
TF256	TAITRON	获取价格	2.5A Fast Recovery Rectifier
TF256	SANYO	获取价格	Electret Condenser Microphone Applications
TF256-3-TL-H	ONSEMI	获取价格	N-Channel JFET, 20V, 140 to 450uA, 1.7mS, USFP, SOT-1123 / USFP, 10000-REEL

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