Datasheet > TE28F320B3T110

TE28F320B3T110

更新时间： 2024-11-13 22:42:23

品牌	Logo	应用领域
英特尔 - INTEL		闪存
页数	文件大小	规格书
48页	296K
描述
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TE28F320B3T110 数据手册

PRELIMINARY

SMART 3 ADVANCED BOOT BLOCK

4-, 8-, 16-, 32-MBIT

FLASH MEMORY FAMILY

28F400B3, 28F800B3, 28F160B3, 28F320B3

28F008B3, 28F016B3, 28F032B3

Flexible SmartVoltage Technology

Flash Data Integrator Software

Flash Memory Manager

2.7 V–3.6 V Read/Program/Erase

12 V V_PPFast Production

Programming

System Interrupt Manager

Supports Parameter Storage,

Streaming Data (e.g., Voice)

2.7 V or 1.65 V I/O Option

Reduces Overall System Power

Automated Program and Block Erase

Status Registers

High Performance

2.7 V–3.6 V: 90 ns Max Access Time

3.0 V–3.6 V: 80 ns Max Access Time

Extended Cycling Capability

Minimum 100,000 Block Erase

Cycles Guaranteed

Optimized Block Sizes

Eight 8-KB Blocks for Data,

Top or Bottom Locations

Up to Sixty-Three 64-KB Blocks for

Code

Automatic Power Savings Feature

Typical I_CCSafter Bus Inactivity

Standard Surface Mount Packaging

48-Ball µBGA* Package

Block Locking

48-Lead TSOP Package

40-Lead TSOP Package

V_CC-Level Control through WP#

Low Power Consumption

Footprint Upgradeable

Upgrade Path for 4-, 8-, 16-, and 32-

Mbit Densities

10 mA Typical Read Current

Absolute Hardware-Protection

V_PP= GND Option

ETOX™ VI (0.25 µ) Flash Technology

V_CCLockout Voltage

Extended Temperature Operation

–40 °C to +85 °C

The Smart 3 Advanced Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-

rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability

(2.7 V read, program and erase) with high-speed, low-power operation. Several new features have been

added, including the ability to drive the I/O at 1.65 V, which significantly reduces system active power and

interfaces to 1.65 V controllers. A new blocking scheme enables code and data storage within a single

device. Add to this the Intel-developed Flash Data Integrator (FDI) software, and you have a cost-effective,

monolithic code plus data storage solution. Smart 3 Advanced Boot Block products will be available in 40-

lead and 48-lead TSOP and 48-ball µBGA* packages. Additional information on this product family can be

obtained by accessing Intel’s WWW page: http://www.intel.com/design/flash.

July 1998

Order Number: 290580-005

12 3 4 5 6 7...48

中文翻译

下载PDF

与TE28F320B3T110相关器件

型号	品牌	获取价格	描述	数据表
TE28F320B3T90	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F320B3TA100	INTEL	获取价格	3 Volt Advanced Boot Block Flash Memory
TE28F320B3TA110	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F320B3TA90	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F320B3TC70	INTEL	获取价格	3 Volt Advanced Boot Block Flash Memory
TE28F320B3TC90	INTEL	获取价格	3 Volt Advanced Boot Block Flash Memory
TE28F320C2BA110	NUMONYX	获取价格	Flash, 2MX16, 110ns, PDSO48, 12 X 20 MM, TSOP-48
TE28F320C2BA120	NUMONYX	获取价格	Flash, 2MX16, 120ns, PDSO48, 12 X 20 MM, TSOP-48
TE28F320C2TA110	NUMONYX	获取价格	Flash, 2MX16, 110ns, PDSO48, 12 X 20 MM, TSOP-48
TE28F320C2TA120	NUMONYX	获取价格	Flash, 2MX16, 120ns, PDSO48, 12 X 20 MM, TSOP-48

与TE28F320B3T110相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

14
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

35

产品中心

服务支持

精选活动

关于我们

帮助中心

TE28F320B3T110

TE28F320B3T110 数据手册

与TE28F320B3T110相关器件

与TE28F320B3T110相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TE28F320B3T110

TE28F320B3T110 数据手册

与TE28F320B3T110相关器件

与TE28F320B3T110相关文章

您还可以找

您在本页遇到什么问题？