5秒后页面跳转
TC7WG00FC(TE85L) PDF预览

TC7WG00FC(TE85L)

更新时间: 2024-11-15 15:54:03
品牌 Logo 应用领域
东芝 - TOSHIBA
页数 文件大小 规格书
6页 233K
描述
NAND Gate 2-Element 2-IN CMOS 8-Pin CST T/R

TC7WG00FC(TE85L) 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
Factory Lead Time:11 weeks风险等级:5.82
Base Number Matches:1

TC7WG00FC(TE85L) 数据手册

 浏览型号TC7WG00FC(TE85L)的Datasheet PDF文件第2页浏览型号TC7WG00FC(TE85L)的Datasheet PDF文件第3页浏览型号TC7WG00FC(TE85L)的Datasheet PDF文件第4页浏览型号TC7WG00FC(TE85L)的Datasheet PDF文件第5页浏览型号TC7WG00FC(TE85L)的Datasheet PDF文件第6页 
TC7WG00FC  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7WG00FC  
Dual 2-Input NAND Gate  
Features  
High output current  
: ±8 mA (min) at VCC = 3 V  
Super high speed operation: tpd = 2.5 ns (typ.)  
at VCC = 3.3 V,15pF  
: VCC = 0.9 to 3.6 V  
Operating voltage range  
5.5-V tolerant inputs  
3.6-V power down protection outputs  
(CST8)  
Weight: 0.002 g (typ.)  
Marking  
Absolute Maximum Ratings (Ta = 25°C)  
Product name  
Characteristics  
Supply voltage  
Symbol  
Rating  
Unit  
V
V
0.5 to 4.6  
CC  
G00  
DC input voltage  
V
0.5 to 7.0  
V
IN  
0.5 to 4.6 (Note1)  
DC output voltage  
V
V
OUT  
0.5 to V +0.5 (Note2)  
CC  
Input diode current  
Output diode current  
DC output current  
I
20  
mA  
IK  
I
20  
±25  
(Note3) mA  
OK  
Pin Assignment (top view)  
I
mA  
mA  
OUT  
DC V /GND current  
CC  
I
±50  
CC  
Vcc  
1Y  
2B  
2A  
Power dissipation  
P
150  
(Note4) mW  
°C  
D
8
7
6
5
Storage temperature  
T
stg  
65 to 150  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure  
rate, etc).  
1
2
3
4
1A  
1B  
2Y GND  
Note 1: V  
= 0 V  
CC  
Note 2: High or Low state.  
Do not exceed IOUT of absolute maximum ratings.  
Note 3: V  
< GND  
OUT  
Note 4: Mounted on an FR4 board.  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 11.56 mm2)  
1
2009-07-09  

与TC7WG00FC(TE85L)相关器件

型号 品牌 获取价格 描述 数据表
TC7WG00FK TOSHIBA

获取价格

CMOS Digital Integrated Circuit Silicon Monolithic Dual 2-Input NAND Gate
TC7WG00FK(TE85L) TOSHIBA

获取价格

IC,LOGIC GATE,DUAL 2-INPUT NAND,CMOS,TSSOP,8PIN,PLASTIC
TC7WG00FK(TE85L,F) TOSHIBA

获取价格

NAND Gate 2-Element 2-IN CMOS 8-Pin SSOP T/R
TC7WG00FK_09 TOSHIBA

获取价格

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WG00FU TOSHIBA

获取价格

CMOS Digital Integrated Circuit Silicon Monolithic Dual 2-Input NAND Gate
TC7WG00FU(TE12L) TOSHIBA

获取价格

IC,LOGIC GATE,DUAL 2-INPUT NAND,CMOS,TSSOP,8PIN,PLASTIC
TC7WG00FU_09 TOSHIBA

获取价格

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WG02FC TOSHIBA

获取价格

CMOS Digital Integrated Circuit Silicon Monolithic Dual 2-Input NOR Gate
TC7WG02FK TOSHIBA

获取价格

CMOS Digital Integrated Circuit Silicon Monolithic Dual 2-Input NOR Gate
TC7WG02FK(TE85L,F) TOSHIBA

获取价格

NOR Gate 2-Element 2-IN CMOS 8-Pin SSOP T/R