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TC7WG02FC PDF预览

TC7WG02FC

更新时间: 2024-09-28 03:09:59
品牌 Logo 应用领域
东芝 - TOSHIBA
页数 文件大小 规格书
6页 177K
描述
CMOS Digital Integrated Circuit Silicon Monolithic Dual 2-Input NOR Gate

TC7WG02FC 技术参数

生命周期:Lifetime Buy零件包装代码:SON
包装说明:VSON, SOLCC8,.05,16针数:8
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.71系列:LVP
JESD-30 代码:R-PDSO-N8JESD-609代码:e0
长度:1.45 mm负载电容(CL):30 pF
逻辑集成电路类型:NOR GATE最大I(ol):0.003 A
功能数量:2输入次数:2
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:VSON封装等效代码:SOLCC8,.05,16
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE
电源:1.2/3.3 VProp。Delay @ Nom-Sup:56 ns
传播延迟(tpd):56 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:0.4 mm
子类别:Gates最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):0.9 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:NO LEAD端子节距:0.4 mm
端子位置:DUAL宽度:1.35 mm

TC7WG02FC 数据手册

 浏览型号TC7WG02FC的Datasheet PDF文件第2页浏览型号TC7WG02FC的Datasheet PDF文件第3页浏览型号TC7WG02FC的Datasheet PDF文件第4页浏览型号TC7WG02FC的Datasheet PDF文件第5页浏览型号TC7WG02FC的Datasheet PDF文件第6页 
TC7WG02FC  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7WG02FC  
Dual 2-Input NOR Gate  
Features  
TC7WG02FC  
High-level output current:  
I /I = ±8 mA (min)  
OH OL  
at V  
= 3 V  
CC  
High-speed operation: t = 2.8 ns (typ.)  
pd  
at V  
= 3.3 V,15pF  
CC  
Operating voltage range: V  
5.5-V tolerant inputs  
= 0.9~3.6 V  
CC  
3.6-V power down protection outputs  
CSON8-P-0.4  
Weight: 0.002 g (typ.)  
Marking  
Absolute Maximum Ratings (Ta = 25°C)  
Product name  
Characteristics  
Symbol  
Value  
Unit  
G02  
Power supply voltage  
DC input voltage  
V
0.5~4.6  
V
V
CC  
V
0.5~7.0  
IN  
0.5~4.6 (Note 1)  
DC output voltage  
V
V
OUT  
0.5~V  
+ 0.5 (Note 2)  
20  
CC  
Input diode current  
Output diode current  
DC output current  
I
mA  
IK  
Pin Assignment (top view)  
I
20 (Note 3) mA  
Vcc  
1Y  
2B  
2A  
OK  
I
±25  
±50  
150  
mA  
OUT  
8
7
6
5
DC V /GND current  
CC  
I
mA  
(Note 4) mW  
°C  
CC  
Power dissipation  
P
D
Storage temperature  
T
65~150  
stg  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/Derating Concept and Methods) and individual  
reliability data (i.e. reliability test report and estimated failure  
rate, etc).  
1
2
3
4
1A  
1B  
2Y GND  
Note 1: V  
= 0V  
CC  
Note 2: High or Low State.  
absolute maximum rating must be observed.  
I
OUT  
Note 3: V  
< GND  
OUT  
Note 4: Mounted on an FR4 board.  
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 11.56 mm )  
1
2007-11-01  

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