Datasheet > TC7WG00FU_09

TC7WG00FU_09

更新时间： 2024-09-28 12:22:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	234K
描述
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

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中文翻译

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数据手册

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TC7WG00FU_09 数据手册

TC7WG00FU/FK

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7WG00FU,TC7WG00FK

Dual 2-Input NAND Gate

TC7WG00FU

Features

•

High output current

: ±8 mA (min) at V_CC= 3 V

Super high speed operation: tpd = 2.5 ns (typ.)

at V_CC= 3.3 V,15pF

: V_CC= 0.9 to 3.6 V

•

Operating voltage range

5.5-V tolerant inputs

(SM8)

3.6-V power down protection outputs

TC7WG00FK

Marking

SM8

G 00

US8

Product Name

Lot No.

(US8)

Weight:

SSOP8-P-0.65

SSOP8-P-0.50A

: 0.02 g (typ.)

: 0.01 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Pin Assignment (top view)

Characteristics

Supply voltage

Symbol

Rating

Unit

−0.5 to 4.6

DC input voltage

−0.5 to 7.0

−0.5 to 4.6 (Note1)

DC output voltage

OUT

−0.5 to V +0.5 (Note2)

Input diode current

Output diode current

DC output current

−20

GND

−20

±25

(Note 3) mA

OUT

DC V /GND current

±50

300 (SM8)

200 (US8)

−65 to 150

Power dissipation

°C

Storage temperature

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Note 1: V

= 0 V

Note 2: High or Low state. Do not exceed I_OUTof absolute maximum ratings.

Note 3: V < GND

OUT

2009-07-09

12 3 4 5 6 7

中文翻译

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