Datasheet > TC7WG125FK_09

TC7WG125FK_09

更新时间： 2024-09-28 11:58:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	234K
描述
Dual Bus Buffer with 3-STATE Output

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中文翻译

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数据手册

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TC7WG125FK_09 数据手册

TC7WG125FU/FK

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7WG125FU,TC7WG125FK

Dual Bus Buffer with 3-STATE Output

Features

TC7WG125FU



High output current

: ±8 mA (min) at V_CC= 3V

Super high speed operation

: t = 2.5 ns (typ.)

at V_CC= 3.3V,15pF



Operating voltage range

5.5-V tolerant inputs

: V_CC= 0.9 to 3.6 V

3.6-V power down protection outputs

(SM8)

TC7WG125FK

Marking

SM8

US8

Product name

Lot. No

G 125

125

(US8)

Weight

SSOP8-P-0.65 : 0.02 g (typ.)

SSOP8-P-0.50A : 0.01 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Pin Assignment (top view)

Characteristics

Supply voltage

Symbol

Rating

Unit

−0.5 to 4.6

−0.5 to 7.0

DC input voltage

0.5 to 4.6 (Note 1)

DC output voltage

OUT

0.5 to V

 0.5 (Note 2)

Input diode current

Output diode current

DC output current

−20

−20(Note 3)

GND

±25

OUT

DC V

/ GND current

±100

300 (SM8)

200 (US8)

Power dissipation

°C

Storage temperature

stg

−65 to 150

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Note 1: V_CC= 0V

Note 2: High or Low state. Do not exceed I_OUTof absolute maximum ratings.

Note 3: V_OUT< GND

2009-09-24

12 3 4 5 6 7...9

中文翻译

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