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TC7WG14FK PDF预览

TC7WG14FK

更新时间: 2024-09-28 04:28:47
品牌 Logo 应用领域
东芝 - TOSHIBA 栅极触发器逻辑集成电路光电二极管
页数 文件大小 规格书
7页 188K
描述
CMOS Digital Integrated Circuit Silicon Monolithic Triple Schmitt Inverter

TC7WG14FK 技术参数

是否Rohs认证: 不符合生命周期:End Of Life
零件包装代码:SOIC包装说明:VSSOP, TSSOP8,.12,20
针数:8Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.69
系列:LVPJESD-30 代码:R-PDSO-G8
JESD-609代码:e0长度:2.3 mm
负载电容(CL):30 pF逻辑集成电路类型:INVERTER
最大I(ol):0.003 A功能数量:3
输入次数:1端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:VSSOP
封装等效代码:TSSOP8,.12,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH电源:1.2/3.3 V
Prop。Delay @ Nom-Sup:59.6 ns传播延迟(tpd):59.6 ns
认证状态:Not Qualified施密特触发器:YES
座面最大高度:0.8 mm子类别:Gates
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):0.9 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
宽度:2 mmBase Number Matches:1

TC7WG14FK 数据手册

 浏览型号TC7WG14FK的Datasheet PDF文件第2页浏览型号TC7WG14FK的Datasheet PDF文件第3页浏览型号TC7WG14FK的Datasheet PDF文件第4页浏览型号TC7WG14FK的Datasheet PDF文件第5页浏览型号TC7WG14FK的Datasheet PDF文件第6页浏览型号TC7WG14FK的Datasheet PDF文件第7页 
TC7WG14FU/FK  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7WG14FU,TC7WG14FK  
Triple Schmitt Inverter  
Features  
High-level output current:  
I
/I = ±8 mA (min)  
OH OL  
TC7WG14FU  
at V  
= 3 V  
CC  
High-speed operation: t = 4.0 ns (typ.)  
pd  
at V  
= 3.3 V,15pF  
CC  
Operating voltage range: V  
5.5-V tolerant inputs  
= 0.9~3.6 V  
CC  
3.6-V power down protection outputs  
TC7WG14FK  
Marking  
SM8  
G 14  
US8  
Product name  
Lot No.  
WG  
14  
Weight  
SSOP8-P-0.65 : 0.02 g (typ.)  
SSOP8-P-0.50A : 0.01 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Pin Assignment (top view)  
Characteristics  
Power supply voltage  
Symbol  
Value  
Unit  
V
0.5~4.6  
V
V
CC  
1A  
3Y  
V
CC  
1
2
3
4
8
7
6
5
DC input voltage  
V
0.5~7.0  
IN  
0.5~ 4.6 (Note 1)  
1Y  
3A  
2Y  
DC output voltage  
V
V
OUT  
0.5~V  
+ 0.5 (Note 2)  
CC  
2A  
Input diode current  
Output diode current  
DC output current  
I
20  
mA  
mA  
mA  
mA  
IK  
I
20 (Note 3)  
±25  
OK  
GND  
I
OUT  
DC V  
/ ground current  
I
±50  
CC  
CC  
300 (SM8)  
200 (US8)  
Power dissipation  
P
mW  
°C  
D
Storage temperature  
T
stg  
65~150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Note 1: V  
= 0V  
CC  
Note 2: High or Low State. I  
absolute maximum rating must be observed.  
OUT  
Note 3: V  
< GND  
OUT  
1
2007-11-01  

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