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TC7WG02FK PDF预览

TC7WG02FK

更新时间: 2024-11-15 03:09:59
品牌 Logo 应用领域
东芝 - TOSHIBA 栅极触发器逻辑集成电路光电二极管
页数 文件大小 规格书
7页 197K
描述
CMOS Digital Integrated Circuit Silicon Monolithic Dual 2-Input NOR Gate

TC7WG02FK 技术参数

是否Rohs认证: 不符合生命周期:End Of Life
零件包装代码:SOIC包装说明:VSSOP, TSSOP8,.12,20
针数:8Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.69
Is Samacsys:N系列:LVP
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:2.3 mm负载电容(CL):30 pF
逻辑集成电路类型:NOR GATE最大I(ol):0.003 A
功能数量:2输入次数:2
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:VSSOP封装等效代码:TSSOP8,.12,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
电源:1.2/3.3 VProp。Delay @ Nom-Sup:56 ns
传播延迟(tpd):56 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:0.9 mm
子类别:Gates最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):0.9 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL宽度:2 mm
Base Number Matches:1

TC7WG02FK 数据手册

 浏览型号TC7WG02FK的Datasheet PDF文件第2页浏览型号TC7WG02FK的Datasheet PDF文件第3页浏览型号TC7WG02FK的Datasheet PDF文件第4页浏览型号TC7WG02FK的Datasheet PDF文件第5页浏览型号TC7WG02FK的Datasheet PDF文件第6页浏览型号TC7WG02FK的Datasheet PDF文件第7页 
TC7WG02FU/FK  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7WG02FU,TC7WG02FK  
Dual 2-Input NOR Gate  
Features  
High-level output current:  
I
/I = ±8 mA (min)  
OH OL  
at V  
= 3 V  
CC  
TC7WG02FU  
High-speed operation: t = 2.8 ns (typ.)  
pd  
at V  
= 3.3 V,15pF  
CC  
Operating voltage range: V  
5.5-V tolerant inputs  
= 0.9~3.6 V  
CC  
3.6-V power down protection outputs  
TC7WG02FK  
Marking  
SM8  
G 02  
US8  
Product name  
Lot No.  
WG  
02  
Weight  
SSOP8-P-0.65 : 0.02 g (typ.)  
SSOP8-P-0.50A : 0.01 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Pin Assignment (top view)  
Characteristics  
Power supply voltage  
Symbol  
Value  
Unit  
1A  
1B  
V
CC  
1
2
3
4
8
7
6
5
V
0.5~4.6  
V
V
CC  
DC input voltage  
V
0.5~7.0  
IN  
1Y  
2B  
2A  
0.5~4.6 (Note 1)  
DC output voltage  
V
V
OUT  
2Y  
0.5~V  
+ 0.5 (Note 2)  
20  
CC  
Input diode current  
Output diode current  
DC output current  
I
mA  
mA  
mA  
mA  
IK  
GND  
I
20 (Note 3)  
±25  
OK  
I
OUT  
DC V  
/ ground current  
I
±50  
CC  
CC  
300 (SM8)  
200 (US8)  
Power dissipation  
P
mW  
°C  
D
Storage temperature  
T
stg  
65~150  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Note 1:  
Note 2:  
Note 3:  
V
= 0 V  
CC  
High or Low State. I  
absolute maximum rating must be observed.  
OUT  
V
OUT  
< GND  
1
2007-11-01  

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