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TC7S04F_09

更新时间： 2024-11-21 12:05:43
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 183K
描述
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

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中文翻译

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TC7S04F_09 数据手册

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TC7S04F/FU  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7S04F,TC7S04FU  
Inverter  
The TC7S04 is a high speed C2MOS Inverter fabricated with  
silicon gate C2MOS technology.  
TC7S04F  
It achieves high speed operation similar to equivalent LSTTL  
while maintaining the C2MOS low power dissipation.  
The internal circuit is composed of 3 stages including buffer  
output, which enables high noise immunity and stable output.  
The input is equipped with protection circuits against static  
discharge or transient excess voltage.  
Output currents are 1/2 compared to TC74HC series models.  
TC7S04FU  
Features  
•
•
•
•
•
•
•
High speed: t = 7 ns (typ.) at V  
= 5 V  
pd  
CC  
Low power dissipation: I  
= 1 μA (max) at Ta = 25°C  
CC  
High noise immunity: V  
= V  
= 28% V  
(min)  
NIH  
NIL  
CC  
Output drive capability: 5 LSTTL loads  
Symmetrical output impedance: |I | = I  
= 2 mA (min)  
OL  
OH  
∼
−
Balanced propagation delays: t  
t
pHL  
pLH  
Wide operating voltage range: V  
(opr) = 2 to 6 V  
CC  
Weight  
SSOP5-P-0.95: 0.016 g (typ.)  
SSOP5-P-0.65A: 0.006 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Supply voltage range  
Symbol  
Rating  
Unit  
V
−0.5 to 7  
V
V
CC  
DC input voltage  
V
−0.5 to V  
+ 0.5  
IN  
CC  
CC  
DC output voltage  
Input diode current  
Output diode current  
DC output current  
V
−0.5 to V  
+ 0.5  
V
OUT  
I
±20  
mA  
mA  
mA  
mA  
mW  
°C  
IK  
I
±20  
±12.5  
±25  
OK  
I
OUT  
DC V /ground current  
CC  
I
CC  
Power dissipation  
P
200  
D
Storage temperature range  
Lead temperature (10 s)  
T
stg  
−65 to 150  
T
L
260  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-09-30  
1234567

中文翻译

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