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TC7S04FU(TE85R,F) PDF预览

TC7S04FU(TE85R,F)

更新时间： 2024-11-21 15:53:59
品牌 Logo 应用领域
东芝 - TOSHIBA 栅光电二极管逻辑集成电路触发器
页数 文件大小 规格书
7页 177K
描述
IC,LOGIC GATE,INVERTER,CMOS,TSSOP,5PIN,PLASTIC

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TC7S04FU(TE85R,F) 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：TSSOP, TSSOP5/6,.08Reach Compliance Code：unknown
风险等级：5.78JESD-30 代码：R-PDSO-G5
负载电容（CL）：50 pF逻辑集成电路类型：INVERTER
最大I（ol）：0.002 A端子数量：5
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装等效代码：TSSOP5/6,.08封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH包装方法：TAPE AND REEL
电源：2/6 VProp。Delay @ Nom-Sup：25 ns
认证状态：Not Qualified施密特触发器：NO
子类别：Gates表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：GULL WING端子节距：0.635 mm
端子位置：DUALBase Number Matches：1

TC7S04FU(TE85R,F) 数据手册

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TC7S04F/FU  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7S04F, TC7S04FU  
Inverter  
The TC7S04 is a high speed C2MOS Inverter fabricated with  
silicon gate C2MOS technology.  
TC7S04F  
It achieves high speed operation similar to equivalent LSTTL  
while maintaining the C2MOS low power dissipation.  
The internal circuit is composed of 3 stages including buffer  
output, which enables high noise immunity and stable output.  
The input is equipped with protection circuits against static  
discharge or transient excess voltage.  
Output currents are 1/2 compared to TC74HC series models.  
TC7S04FU  
Features  
•
•
•
•
•
•
•
High speed: t = 7 ns (typ.) at V  
= 5 V  
pd  
CC  
Low power dissipation: I  
= 1 μA (max) at Ta = 25°C  
CC  
High noise immunity: V  
= V  
= 28% V  
(min)  
NIH  
NIL  
CC  
Output drive capability: 5 LSTTL loads  
Symmetrical output impedance: |I | = I  
= 2 mA (min)  
OL  
OH  
∼
−
Balanced propagation delays: t  
t
pHL  
pLH  
Wide operating voltage range: V  
(opr) = 2 to 6 V  
CC  
Weight  
SSOP5-P-0.95: 0.016 g (typ.)  
SSOP5-P-0.65A: 0.006 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Supply voltage range  
Symbol  
Rating  
Unit  
V
−0.5 to 7  
V
V
CC  
DC input voltage  
V
−0.5 to V  
+ 0.5  
IN  
CC  
CC  
DC output voltage  
Input diode current  
Output diode current  
DC output current  
V
−0.5 to V  
+ 0.5  
V
OUT  
I
±20  
mA  
mA  
mA  
mA  
mW  
°C  
IK  
I
±20  
±12.5  
±25  
OK  
I
OUT  
DC V /ground current  
CC  
I
CC  
Power dissipation  
P
200  
D
Storage temperature range  
Lead temperature (10 s)  
T
stg  
−65 to 150  
T
L
260  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
1987-08  
1
2014-03-01  
1234567

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