Datasheet > TC7S08FU_09

TC7S08FU_09

更新时间： 2024-11-25 12:22:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	210K
描述
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

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中文翻译

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数据手册

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TC7S08FU_09 数据手册

TC7S08F/FU

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7S08F, TC7S08FU

2-Input AND Gate

TC7S08F

Features

•

High Speed

: t

: I

7ns (typ.) at V

= 5 V

pd =

Low power dissipation

High noise immunity

Output drive capability

= 1 μA (max) at Ta = 25°C

: V

= V

= 28% V

(min)

NIH

NIL

: 5 LSTTL Loads

Symmetrical Output Impedance |I | = I = 2mA (min)

(SMV)

Balanced propagation delays : t

≒ t

pHL

pLH

TC7S08FU

Wide operating voltage range : V

= 2 to 6 V

Marking

Product name

E 2

(USV)

Weight

SSOP5-P-0.95

SSOP5-P-0.65A

: 0.016 g (Typ.)

: 0.006 g (Typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Supply voltage

Symbol

Rating

Unit

Pin Assignment (top view)

−0.5 to 7.0

DC input voltage

−0.5 to V

+ 0.5

IN B

IN A

GND

DC output voltage

Input diode current

Output diode current

DC output current

−0.5 to V

+ 0.5

OUT

±20

°C

±20

±12.5

±25

OUT

DC V /ground current

OUT Y

Power dissipation

200

Storage temperature

Lead temperature (10 s)

stg

−65 to 150

260

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2009-08-05

12 3 4 5 6 7

中文翻译

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