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TC7S04FU,LF(T PDF预览

TC7S04FU,LF(T

更新时间: 2024-11-06 20:06:59
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管逻辑集成电路
页数 文件大小 规格书
7页 489K
描述
Inverter, HC/UH Series, 1-Func, 1-Input, CMOS, PDSO5

TC7S04FU,LF(T 技术参数

生命周期:Active包装说明:TSSOP,
Reach Compliance Code:unknown风险等级:5.63
系列:HC/UHJESD-30 代码:R-PDSO-G5
长度:2 mm逻辑集成电路类型:INVERTER
功能数量:1输入次数:1
端子数量:5最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH传播延迟(tpd):125 ns
座面最大高度:1.1 mm最大供电电压 (Vsup):6 V
最小供电电压 (Vsup):2 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
宽度:1.25 mmBase Number Matches:1

TC7S04FU,LF(T 数据手册

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TC7S04F/FU  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7S04F, TC7S04FU  
Inverter  
The TC7S04 is a high speed C2MOS Inverter fabricated with  
silicon gate C2MOS technology.  
TC7S04F  
It achieves high speed operation similar to equivalent LSTTL  
while maintaining the C2MOS low power dissipation.  
The internal circuit is composed of 3 stages including buffer  
output, which enables high noise immunity and stable output.  
The input is equipped with protection circuits against static  
discharge or transient excess voltage.  
Output currents are 1/2 compared to TC74HC series models.  
Features  
TC7S04FU  
High speed: t = 7 ns (typ.) at V = 5 V  
pd CC  
Low power dissipation: I = 1 μA (max) at Ta = 25°C  
CC  
High noise immunity: V  
= V  
NIL  
= 28% V (min)  
CC  
NIH  
Output drive capability: 5 LSTTL loads  
Symmetrical output impedance: |I | = I = 2 mA (min)  
OH  
OL  
Balanced propagation delays: t  
t
pLH  
pHL  
Wide operating voltage range: V  
(opr) = 2 to 6 V  
CC  
Weight  
SSOP5-P-0.95: 0.016 g (typ.)  
SSOP5-P-0.65A: 0.006 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Supply voltage range  
Symbol  
Rating  
Unit  
V
-0.5 to 7  
V
V
CC  
DC input voltage  
V
-0.5 to V  
+ 0.5  
IN  
CC  
CC  
DC output voltage  
Input diode current  
Output diode current  
DC output current  
V
-0.5 to V  
+ 0.5  
V
OUT  
I
±20  
mA  
mA  
mA  
mA  
mW  
°C  
IK  
I
±20  
±12.5  
±25  
OK  
I
OUT  
DC V /ground current  
CC  
I
CC  
Power dissipation  
P
200  
D
Storage temperature range  
Lead temperature (10 s)  
T
-65 to 150  
260  
stg  
T
°C  
L
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant  
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the  
operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated  
failure rate, etc).  
Start of commercial production  
1987-08  
© 2001-2017  
Toshiba Electronic Devices & Storage Corporation  
2017-08-01  
1

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