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TC6320TG PDF预览

TC6320TG

更新时间: 2024-09-16 04:00:31
品牌 Logo 应用领域
超科 - SUPERTEX 晶体晶体管功率场效应晶体管开关光电二极管
页数 文件大小 规格书
3页 111K
描述
N- and P-Channel Enhancement-Mode MOSFET Pair

TC6320TG 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
风险等级:5.44Is Samacsys:N
外壳连接:DRAIN配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏源导通电阻:7 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e0元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL AND P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TC6320TG 数据手册

 浏览型号TC6320TG的Datasheet PDF文件第2页浏览型号TC6320TG的Datasheet PDF文件第3页 
TC6320  
________________________________________________________________________________  
Initial Release  
N- and P-Channel Enhancement-Mode MOSFET Pair  
Features  
General Description  
The Supertex TC6320TG consists of a high voltage low  
threshold N-channel and P-channel MOSFET in an SO-8  
package. Both MOSFETs have integrated gate-source  
resistors and gate-source zener diode clamps which are  
desired for high voltage pulser applications. TC6320TG, a  
complementary high-speed, high voltage, gate-clamped  
N- and P-channel MOSFET pair in a single SO-8  
package. The TC6320TG offers 200V breakdown voltage,  
2.0A output peak current and low input capacitance. The  
2.0A output current capability will minimize rise and fall  
times. The low input capacitance will minimize  
propagation delay times and also rise and fall times. The  
MOSFETs have integrated gate-source resistors and  
gate-source zener diode clamps that are desired for high  
voltage pulser applications saving board space and  
improving performance. It is specifically designed for  
applications in medical ultrasound transmitters and non-  
destructive evaluation in materials flaw detection, but it  
can also be used as an efficient buffer.  
Integrated gate-source resistor  
Integrated gate-source zener diode  
Low threshold  
Low on-resistance  
Independent N- and P-channels  
Electrically isolated N- and P-channels  
Low input capacitance  
Fast switching speeds  
Free from secondary breakdowns  
Low input and output leakage  
Application  
High voltage pulsers  
Amplifiers  
Buffers  
Piezoelectric transducer drivers  
General purpose line drivers  
Logic level interfaces  
Package Option  
S1  
G1  
S2  
G2  
1
2
3
4
8
7
6
5
D1  
D1  
D2  
D2  
N-Channel  
P-Channel  
Absolute Maximum Ratings*  
Drain-to-Source Voltage  
BVDSS  
BVDGS  
Drain-to-Gate Voltage  
Operating and Storage Temperature  
-55°C to +150°C  
300°C  
Soldering Temperature*  
*Distance of 1.6mm from case for 10 seconds.  
SO-8 Package  
(top view)  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate  
"products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices  
determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For  
the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or  
to the Legal/Disclaimer page on the Supertex website.  

TC6320TG 替代型号

型号 品牌 替代类型 描述 数据表
TC6320TG-G SUPERTEX

完全替代

N- and P- Channel Enhancement-Mode Dual MOSFET

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