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TC6320TG-G PDF预览

TC6320TG-G

更新时间: 2024-11-06 04:00:31
品牌 Logo 应用领域
超科 - SUPERTEX 晶体晶体管功率场效应晶体管开关光电二极管PC
页数 文件大小 规格书
4页 379K
描述
N- and P- Channel Enhancement-Mode Dual MOSFET

TC6320TG-G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliant风险等级:5.33
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏源导通电阻:7 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL AND P-CHANNEL认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TC6320TG-G 数据手册

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TC6320  
N- and P- Channel Enhancement-Mode Dual MOSFET  
Features  
General Description  
The Supertex TC6320 consists of high voltage low  
threshold N-channel and P-channel MOSFETs in an SO-  
8 package. Both MOSFETs have integrated gate-source  
resistors and gate-source zener diode clamps which are  
desired for high voltage pulser applications. The TC6320 is  
a complimentary, high-speed, high voltage, gate-clamped  
N- and P-channel MOSFET pair in an SO-8 package.  
These low threshold enhancement-mode (normally-off)  
transistors utilize an advanced vertical DMOS structure  
and Supertex’s well-proven silicon-gate manufacturing  
process. This combination produces devices with the  
power handling capabilities of bipolar transistors and  
with the high input impedance and positive temperature  
coefficient inherent in MOS devices. Characteristic of  
all MOS structures, these devices are free from thermal  
runaway and thermally induced secondary breakdown.  
Low threshold  
Low on resistance  
Low input capacitance  
Fast switching speeds  
Freedom from secondary breakdown  
Low input and output leakage  
Independent, electrically isolated N- and P-  
channels  
Applications  
Medical ultrasound transmitters  
High voltage pulsers  
Amplifiers  
Buffers  
Piezoelectric transducer drivers  
General purpose line drivers  
Supertex’s vertical DMOS FETs are ideally suited to a  
wide range of switching and amplifying applications where  
very low threshold voltage, high breakdown voltage, high  
input impedance, low input capacitance, and fast switching  
speeds are desired.  
Ordering Information  
Package Options  
BVDSS/BVDGS  
RDS(ON) (MAX)  
Device  
8-Lead SOIC (Narrow Body)  
N-Channel  
200V  
P-Channel  
N-Channel  
P-Channel  
-200V  
7.0Ω  
8.0Ω  
TC6320  
TC6320TG  
TC6320TG-G  
-G indicates package is RoHS compliant (‘Green’)  
Pin Configuration  
S1  
G1  
S2  
G2  
1
2
3
4
8
7
6
5
D1  
D1  
D2  
D2  
Absolute Maximum Ratings  
Parameter  
Value  
N-Channel  
Drain to source voltage  
BVDSS  
BVDGS  
Drain to gate voltage  
Operating and storage temperature  
Soldering temperature1  
-55°C to +150°C  
+300°C  
P-Channel  
Absolute Maximum Ratings are those values beyond which damage to  
the device may occur. Functional operation under these conditions is not  
implied. Continuous operation of the device at the absolute rating level  
may affect device reliability. All voltages are referenced to device ground.  
SO-8 Package  
(top view)  
Note 1. Distance of 1.6mm from case for 10 seconds.  

TC6320TG-G 替代型号

型号 品牌 替代类型 描述 数据表
TC6320TG SUPERTEX

完全替代

N- and P-Channel Enhancement-Mode MOSFET Pair

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