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TC6320K6-G PDF预览

TC6320K6-G

更新时间: 2024-11-07 01:18:11
品牌 Logo 应用领域
超科 - SUPERTEX /
页数 文件大小 规格书
6页 695K
描述
N- and P-Channel Enhancement-Mode MOSFET Pair

TC6320K6-G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DFN
包装说明:SMALL OUTLINE, R-PDSO-N8针数:8
Reach Compliance Code:compliant风险等级:5.83
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏源导通电阻:7 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-N8JESD-609代码:e3
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL AND P-CHANNEL认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:MATTE TIN端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

TC6320K6-G 数据手册

 浏览型号TC6320K6-G的Datasheet PDF文件第2页浏览型号TC6320K6-G的Datasheet PDF文件第3页浏览型号TC6320K6-G的Datasheet PDF文件第4页浏览型号TC6320K6-G的Datasheet PDF文件第5页浏览型号TC6320K6-G的Datasheet PDF文件第6页 
Supertex inc.  
TC6320  
N- and P-Channel  
Enhancement-Mode MOSFET Pair  
Features  
General Description  
Integrated GATE-to-SOURCE resistor  
Integrated GATE-to-SOURCE Zener diode  
Low threshold  
The Supertex TC6320 consists of high voltage, low threshold  
N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN  
packages. Both MOSFETs have integrated GATE-to-SOURCE  
resistors and GATE-to-SOURCE Zener diode clamps which are  
desired for high voltage pulser applications. It is a complimentary,  
high-speed, high voltage, GATE-clamped N- and P-channel  
MOSFET pair, which utilizes an advanced vertical DMOS  
structure and Supertex’s well-proven silicon-gate manufacturing  
process. This combination produces a device with the power  
handling capabilities of bipolar transistors and with the high  
input impedance and positive temperature coefficient inherent in  
MOS devices. Characteristic of all MOS structures, this device  
is free from thermal runaway and thermally induced secondary  
breakdown.  
Low on-resistance  
Low input capacitance  
Fast switching speeds  
Free from secondary breakdown  
Low input and output leakage  
Independent, electrically isolated N- and  
P-channels  
Applications  
High voltage pulsers  
Amplifiers  
Buffers  
Supertex’s vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where very low threshold  
voltage, high breakdown voltage, high input impedance, low  
input capacitance, and fast switching speeds are desired.  
Piezoelectric transducer drivers  
General purpose line drivers  
Logic level interfaces  
Typical Application Circuit  
+100V  
VH  
VDD  
OE  
10nF  
10nF  
INA  
INB  
-100V  
VL  
VSS  
Supertex  
MD12xx, MD17xx, or MD18xx  
Supertex  
TC6320  
Doc.# DSFP-TC6320  
D012913  
Supertex inc.  
www.supertex.com  

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