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TC6320LG

更新时间： 2024-11-06 15:53:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP 放大器开关光电二极管晶体管
页数 文件大小 规格书
4页 375K
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TC6320LG

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中文翻译

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TC6320LG 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SOIC-8Reach Compliance Code：compliant
风险等级：5.38其他特性：FAST SWITCHING, LOW THRESHOLD
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：200 V
最大漏源导通电阻：7 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：23 pFJESD-30 代码：R-PDSO-G8
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL AND P-CHANNEL表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

TC6320LG 数据手册

 浏览型号TC6320LG的Datasheet PDF文件第2页浏览型号TC6320LG的Datasheet PDF文件第3页浏览型号TC6320LG的Datasheet PDF文件第4页 
TC6320  
N- and P- Channel Enhancement-Mode Dual MOSFET  
Features  
General Description  
The Supertex TC6320TG consists of a high voltage low  
threshold N-channel and P-channel MOSFET in an SO-  
8 package. Both MOSFETs have integrated gate-source  
resistors and gate-source zener diode clamps which are  
desired for high voltage pulser applications. The TC6320 is  
a complementary high-speed, high voltage, gate-clamped  
N- and P-channel MOSFET pair in a single SO-8 package.  
TheTC6320TGoffers200Vbreakdownvoltage, 2.0Aoutput  
peak current and low input capacitance. The 2.0A output  
current capability will minimize rise and fall times. The low  
input capacitance will minimize propagation delay times  
and also rise and fall times.The MOSFET has integrated  
gate-source resistors and gate-source zener diode clamps  
that are desired for high voltage pulser applications saving  
board space and improving performance. It is specifically  
designed for applications in medical ultrasound transmitters  
and non-destructive evaluation in materials flaw detection,  
but it can also be used as an efficient buffer.  
► Low threshold  
► Low on resistance  
► Low input capacitance  
► Fast switching speeds  
► Freedom from secondary breakdown  
► Low input and output leakage  
► Independent, electrically isolated N- and P-  
channels  
Applications  
► Medical ultrasound transmitters  
► High voltage pulsers  
► Amplifiers  
► Buffers  
► Piezoelectric transducer drivers  
► General purpose line drivers  
Ordering Information  
Package Options  
Device  
8-Lead SOIC (Narrow Body)  
TC6320  
TC6320LG  
TC6320LG-G  
-G indicates package is RoHS compliant (‘Green’)  
Pin Configuration  
BVDSS/BVDGS  
RDS(ON) (MAX)  
N-Channel  
P-Channel  
N-Channel  
P-Channel  
200V  
-200V  
7.0Ω  
12Ω  
S1  
G1  
S2  
G2  
1
2
3
4
8
7
6
5
D1  
D1  
D2  
D2  
Absolute Maximum Ratings  
Parameter  
N-Channel  
Value  
BVDSS  
Drain to source voltage  
Drain to gate voltage  
BVDGS  
Gate to source voltage  
20V  
P-Channel  
Operating and storage temperature  
Soldering temperature1  
Absolute Maximum Ratings are those values beyond which damage to the device  
may occur. Functional operation under these conditions is not implied. Continuous  
operation of the device at the absolute rating level may affect device reliability. All  
voltages are referenced to device ground.  
-55°C to +150°C  
SO-8 Package  
+300°C  
(top view)  
Note 1. Distance of 1.6mm from case for 10 seconds.  
1234

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