TC55VZM216AJJN/AFTN08,10,12
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT CMOS STATIC RAM
DESCRIPTION
The TC55VZM216AJJN/AFTN is a 4,194,304-bit high-speed static random access memory (SRAM) organized as
262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high
speed, it operates from a single 3.3 V power supply. Chip enable (CE ) can be used to place the device in a
low-power mode, and output enable ( OE ) provides fast memory access. Data byte control signals ( LB , UB ) provide
lower and upper byte access. This device is well suited to cache memory applications where high-speed access and
high-speed storage are required. All inputs and outputs are directly LVTTL compatible. The
TC55VZM216AJJN/AFTN is available in plastic 44-pin SOJ and TSOP with 400mil width for high density surface
assembly.
FEATURES
•
•
•
•
•
Single power supply voltage of 3.3 V 0.3 V
Fully static operation
•
Fast access time (the following are maximum values)
TC55VZM216AJJN/AFTN08:8 ns
All inputs and outputs are LVTTL compatible
Output buffer control using OE
Data byte control using LB (I/O1 to I/O8) and
UB (I/O9 to I/O16)
TC55VZM216AJJN/AFTN10:10 ns
TC55VZM216AJJN/AFTN12:12 ns
•
Low-power dissipation (IDDO2
)
(the following are maximum values)
•
Package:
Cycle Time
8
10
12
ns
SOJ44-P-400-1.27 (AJJN)
(Weight: 1.64 g typ)
TSOP II44-P-400-0.80 (AFTN) (Weight: 0.45 g typ)
Operation (max) 140
130
120
mA
Standby:4 mA (both devices)
PIN ASSIGNMENT (TOP VIEW)
44 PIN SOJ 44 PIN TSOP
PIN NAMES
A0 to A17
Address Inputs
A4
1
2
3
4
5
6
7
8
9
44 A5
43 A6
42 A7
A4
A3
A2
A1
A0
1
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O1 to I/O16 Data Inputs/Outputs
A3
A2
A1
A0
2
3
CE
WE
Chip Enable Input
Write Enable Input
Output Enable Input
Data Byte Control Inputs
Power (+3.3 V)
41
40
39
4
OE
UB
LB
5
6
CE
CE
I/O1
38 I/O16
37 I/O15
36 I/O14
35 I/O13
34 GND
33 VDD
I/O1
7
I/O16
I/O15
I/O14
I/O13
GND
VDD
OE
I/O2
I/O3
I/O2
I/O3
I/O4
VDD
8
9
I/O4 10
VDD 11
10
11
12
13
14
15
16
17
18
19
20
21
22
LB , UB
GND 12
I/O5 13
I/O6 14
I/O7 15
I/O8 16
GND
I/O5
I/O6
I/O7
I/O8
WE
A15
A14
A13
A12
A16
V
DD
32 I/O12
31 I/O11
30 I/O10
29 I/O9
28 NU
27 A8
26 A9
25 A10
24 A11
23 A17
I/O12
I/O11
I/O10
I/O9
NU
GND
NU
Ground
Not Usable (Input)
17
WE
A15 18
A14 19
A13 20
A12 21
A16 22
A8
A9
A10
A11
A17
(TC55VZM216AFTN)
(TC55VZM216AJJN)
2003-01-17 1/11