是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TSOP1 | 包装说明: | TSOP1-R, TSSOP40,.56,20 |
针数: | 40 | Reach Compliance Code: | unknown |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.92 | 最长访问时间: | 85 ns |
I/O 类型: | COMMON | JESD-30 代码: | R-PDSO-G40 |
JESD-609代码: | e0 | 长度: | 12.4 mm |
内存密度: | 4194304 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 40 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 512KX8 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP1-R |
封装等效代码: | TSSOP40,.56,20 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 并行/串行: | PARALLEL |
电源: | 3/3.3 V | 认证状态: | Not Qualified |
反向引出线: | YES | 座面最大高度: | 1.2 mm |
最大待机电流: | 0.000005 A | 最小待机电流: | 1.5 V |
子类别: | SRAMs | 最大压摆率: | 0.04 mA |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子节距: | 0.5 mm | 端子位置: | DUAL |
宽度: | 10 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TC55V040XB-70 | TOSHIBA |
获取价格 |
IC 512K X 8 STANDARD SRAM, 70 ns, PBGA48, 9 X 12 MM, 0.75 MM PITCH, PLASTIC, TFBGA-48, Sta | |
TC55V040XB-85 | TOSHIBA |
获取价格 |
IC 512K X 8 STANDARD SRAM, 85 ns, PBGA48, 9 X 12 MM, 0.75 MM PITCH, PLASTIC, TFBGA-48, Sta | |
TC55V1001AF | TOSHIBA |
获取价格 |
131,072-WORD BY 8-BIT CMOS STATIC RAM | |
TC55V1001AF-10 | TOSHIBA |
获取价格 |
131,072-WORD BY 8-BIT CMOS STATIC RAM | |
TC55V1001AF-10L | TOSHIBA |
获取价格 |
131,072-WORD BY 8-BIT CMOS STATIC RAM | |
TC55V1001AF-70L | TOSHIBA |
获取价格 |
IC 128K X 8 STANDARD SRAM, 70 ns, PDSO32, 0.525 INCH, 1.27 MM PITCH, PLASTIC, SOP-32, Stat | |
TC55V1001AF-85 | TOSHIBA |
获取价格 |
131,072-WORD BY 8-BIT CMOS STATIC RAM | |
TC55V1001AF-85L | TOSHIBA |
获取价格 |
131,072-WORD BY 8-BIT CMOS STATIC RAM | |
TC55V1001AFI | TOSHIBA |
获取价格 |
131,072-WORD BY 8-BIT CMOS STATIC RAM | |
TC55V1001AFI-10 | TOSHIBA |
获取价格 |
131,072-WORD BY 8-BIT CMOS STATIC RAM |