Datasheet > TC2591P1721

TC2591P1721

更新时间： 2024-09-09 15:53:55

品牌	Logo	应用领域
全讯科技 - TRANSCOM		/
页数	文件大小	规格书
3页	70K
描述
RF Power Field-Effect Transistor

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TC2591P1721 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.64
Base Number Matches：	1

TC2591P1721 数据手册

TC2591

REV4_20070507

1 W Flange Ceramic Packaged PHEMT GaAs Power FETs

FEATURES

PHOTO ENLARGEMENT

• 1 W Typical Output Power at 6 GHz

• 12 dB Typical Linear Power Gain at 6 GHz

• High Linearity: IP3 = 40 dBm Typical at 6 GHz

• High Power Added Efficiency:

Nominal PAE of 43 % at 6 GHz

• Suitable for High Reliability Application

• Breakdown Voltage: BV_DGO≥ 15 V

• Lg = 0.35 µm, Wg = 2.4 mm

• Tight Vp ranges control

• High RF input power handling capability

• 100 % DC Tested

• Flange Ceramic Package

DESCRIPTION

The TC2591 is packaged with the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.

The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC

and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers

for commercial and military high performance power applications.

ELECTRICAL SPECIFICATIONS (T_A=25 °C)

Symbol

P_1dB

G_L

CONDITIONS

Output Power at 1dB Gain Compression Point , f = 6GHz V_DS= 8 V, I_DS= 240 mA

Linear Power Gain, f = 6GHz V_DS= 8 V, I_DS= 240 mA

MIN TYP MAX UNIT

29.5

dBm

IP3

Intercept Point of the 3^rd-order Intermodulation, f = 6GHz V_DS= 8 V, I_DS= 240 mA, *P_SCL= 17 dBm

Power Added Efficiency at 1dB Compression Power, f = 6GHz

Saturated Drain-Source Current at V_DS= 2 V, V_GS= 0 V

dBm

PAE

I_DSS

g_m

600

400

-1.7**

Transconductance at V_DS= 2 V, V_GS= 0 V

V_P

Pinch-off Voltage at V_DS= 2 V, I_D= 4.8 mA

Volts

°C/W

BV_DGODrain-Gate Breakdown Voltage at I_DGO=1.2 mA

R_thThermal Resistance

Note: * P_SCL: Output Power of Single Carrier Level.

** For the tight control of the pinch-off voltage range, we divide TC2591 into 3 model numbers to fit customer design requirement

(1)TC2591P1519 : Vp = -1.5V to -1.9V (2)TC2591P1620 : Vp = -1.6V to -2.0V (3)TC2591P1721 : Vp = -1.7V to -2.1V

If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.

TRANSCOM, INC., 90 Dasoong 7^thRoad, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

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