5秒后页面跳转
TC2320 PDF预览

TC2320

更新时间: 2024-11-06 22:20:07
品牌 Logo 应用领域
超科 - SUPERTEX /
页数 文件大小 规格书
3页 436K
描述
N- and P- Channel Enhancement-Mode Dual MOSFET

TC2320 数据手册

 浏览型号TC2320的Datasheet PDF文件第2页浏览型号TC2320的Datasheet PDF文件第3页 
TC2320  
N- and P- Channel Enhancement-Mode Dual MOSFET  
BVDSS/BVDGS  
RDS(ON) (max)  
Order Number/Package  
SO-8  
N-Channel P-Channel N-Channel P-Channel  
200V  
-200V  
7.0  
12  
TC2320TG  
Low Threshold DMOS Technology  
Features  
Low threshold  
The SupertexTC2320TG consist of a high voltage low threshold N-  
channel and P-channel MOSFET in an SO-8 package. These low  
threshold enhancement-mode (normally-off) transistors utilize an  
advanced vertical DMOS structure and Supertex’s well-proven  
silicon-gate manufacturing process. This combination produces  
devices with the power handling capabilities of bipolar transistors  
and with the high input impedance and positive temperature  
coefficient inherent in MOS devices. Characteristic of all MOS  
structures, these devices are free from thermal runaway and  
thermally-induced secondary breakdown.  
Low on resistance  
Independent, electrically isolated N- and P-channels  
Low input capacitance  
Fast switching speeds  
Free from secondary breakdowns  
Low input and output leakage  
Supertex’s vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where very low threshold  
voltage, high breakdown voltage, high input impedance, low input  
capacitance, and fast switching speeds are desired.  
Application  
Medical Ultrasound Transmitters  
High voltage pulsers  
Amplifiers  
Buffers  
Piezoelectric transducer drivers  
General purpose line drivers  
Logic level interfaces  
Package Option  
S1  
G1  
S2  
G2  
1
2
3
4
8
7
6
5
D1  
D1  
D2  
D2  
N-Channel  
P-Channel  
Absolute Maximum Ratings*  
Drain-to-Source Voltage  
BVDSS  
BVDGS  
±20V  
Drain-to-Gate Voltage  
Gate-to-Source Voltage  
Operating and Storage Temperature  
Soldering Temperature*  
-55°C to +150°C  
300°C  
*Distance of 1.6mm from case for 10 seconds.  
SO-8 Package  
(top view)  
04/23/02  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability  
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to  
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the  
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.  

与TC2320相关器件

型号 品牌 获取价格 描述 数据表
TC2320_07 SUPERTEX

获取价格

N- and P-Channel Enhancement-Mode Dual MOSFET
TC2320TG SUPERTEX

获取价格

N- and P- Channel Enhancement-Mode Dual MOSFET
TC2320TG-G SUPERTEX

获取价格

N- and P-Channel Enhancement-Mode Dual MOSFET
TC23230000J0G AMPHENOL

获取价格

Barrier Strip Terminal Block
TC23232000J0G AMPHENOL

获取价格

Barrier Strip Terminal Block
TC23232200J0G AMPHENOL

获取价格

Barrier Strip Terminal Block
TC23234200J0G AMPHENOL

获取价格

Barrier Strip Terminal Block
TC23239000J0G AMPHENOL

获取价格

Barrier Strip Terminal Block
TC2323C100J0G AMPHENOL

获取价格

Barrier Strip Terminal Block
TC232COE MICROCHIP

获取价格

DUAL RS-232 TRANSMITTER/RECEIVER AND POWER SUPPLY