Datasheet > T1G6003028-FS-EVB1

T1G6003028-FS-EVB1

更新时间： 2024-09-21 01:15:35

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
13页	1245K
描述
30W, 28V, DC 6 GHz, GaN RF Power Transistor

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T1G6003028-FL

30W, 28V, DC – 6 GHz, GaN RF Power Transistor

Applications

•

Military radar

Civilian radar

Professional and military radio

communications

•

Test instrumentation

Wideband or narrowband amplifiers

Jammers

Product Features

Functional Block Diagram

•

Frequency: DC to 6 GHz

Output Power (P3dB): 30 W at 6 GHz

Linear Gain: >14 dB at 6 GHz

Operating Voltage: 28 V

•

Low thermal resistance package

General Description

Pin Configuration

The TriQuint T1G6003028-FL is a 30 W (P_3dB

)

Pin #

Flange

Symbol

discrete GaN on SiC HEMT which operates

from DC to 6 GHz. The device is constructed

with TriQuint’s proven 0.25 µm process, which

features advanced field plate techniques to

optimize power and efficiency at high drain

bias operating conditions. This optimization

can potentially lower system costs in terms of

fewer amplifier line-ups and lower thermal

management costs.

Vd/RF OUT

Vg/RF IN

Source

Ordering Information

Material No.

Part No.

Description ECCN

Packaged part:

EAR99

1095873

T1G6003028-FL

Lead-free and RoHS compliant

Flanged

5.4-5.9 GHz

EAR99

T1G6003028-FS-

EVB1

1093989

Eval. Board

Evaluation Boards are available upon request.

Data Sheet: Rev - 10/16/2012

- 1 of 13 -

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network^®

12 3 4 5 6 7...13

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