Datasheet > T1L2003028-SP

T1L2003028-SP

更新时间： 2024-09-20 08:53:07

品牌	Logo	应用领域
TRIQUINT		晶体晶体管
页数	文件大小	规格书
4页	373K
描述
30 W, 28V, 500 MHz-2 GHz, PowerbandTM LDMOS RF Power Transistor

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T1L2003028-SP 数据手册

T1L2003028-SP

30 W, 28V, 500 MHz—2 GHz, Powerband^TMLDMOS RF Power Transistor

Table 1. Thermal Characterisꢀcs

Introducꢀon

Parameter

Sym

Value

Unit

The T1L2003028-SP is a POWERBAND^TMdiscrete LDMOS,

enhancement mode RF Power transistor designed to operate

from 500MHz to 2GHz in wide-band circuits. The device has an

instantaneous band-width P1dB output power of 30waꢀs across

the enꢁre band when operated in the TriQuint wide-band test

ﬁxture. The T1L2003028-SP can also be used in narrow band ap-

plicaꢁons and is rated at 45Waꢀs P1dB at 2GHz.

Thermal Resistance,

R_ JC

1.3

°C/W

Juncꢁon to Case:

Table 2. Absolute Maximum Raꢀngs*

Parameter

Drain-source Voltage

Sym

VDSS

VGS –0.5, +15

Value

Unit

Vdc

Adc

Figure 1. Available Packages

Gate-source Voltage

Drain Current—Conꢁnuous

Total Dissipaꢁon at TC = 25 °C:

T1L2003028-SP

4.25

135

Derate Above 25 °C:

T1L2003028-SP

—

0.77

200

W/°C

°C

Operaꢁng Juncꢁon Temperature

Storage Temperature Range

TSTG –65, +150

°C

* Stresses in excess of the absolute maximum raꢁngs can cause permanent dam-

age to the device. These are absolute stress raꢁngs only. Funcꢁonal operaꢁon of

the device is not implied at these or any other condiꢁons in excess of those given

in the operaꢁonal secꢁons of the data sheet. Exposure to absolute maximum

raꢁngs for extended periods can adversely aﬀect device reliability.

Table 3. ESD Raꢀng*

T1L2003028-SP

HBM

Minimum (V)

Class

500

Features

CDM

1500

* Although electrostaꢁc discharge (ESD) protecꢁon circuitry has been designed

into this device, proper precauꢁons must be taken to avoid exposure to ESD and

electrical overstress (EOS) during all handling, assembly, and test operaꢁons.

Agere employs a human-body model (HBM), a machine model (MM), and a

charged-device model (CDM) qualiﬁcaꢁon requirement in order to determine

ESD-suscepꢁbility limits and protecꢁon design evaluaꢁon. ESD voltage thresholds

are dependent on the circuit parameters used in each of the models, as deﬁned

by JEDEC’s JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM)

standards.

— Excepꢁonal Instantaneous band-width performance from

500MHz – 2GHz

— Increased eﬃciency results in signiﬁcant advantages

— Smaller and lighter systems

— Reduced system component costs

— Reduced energy consumpꢁon

— Typical Performance raꢁngs

— Wide-Band 500MHz-2GHz

(as tested in TriQuint Wideband Fixture)

— 10dB gain

Cauꢀon: MOS devices are suscepꢀble to damage from electrostaꢀc charge.

Reasonable precauꢀons in handling and packaging MOS devices

should be observed.

— 45% Eﬃciency

— 30Waꢀ P1dB

— Narrow Band up to 2GHz

— 14dB gain

Preliminary Data Sheet

Subject to Change

— 59% eﬃciency

— 45Waꢀ P1dB

www.triquint.com/powerband

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