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T1986N12TOF PDF预览

T1986N12TOF

更新时间: 2024-09-19 21:09:35
品牌 Logo 应用领域
英飞凌 - INFINEON 栅极
页数 文件大小 规格书
31页 458K
描述
Silicon Controlled Rectifier, 1990000mA I(T), 1200V V(DRM)

T1986N12TOF 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
标称电路换相断开时间:250 µs关态电压最小值的临界上升速率:1000 V/us
最大直流栅极触发电流:250 mA最大直流栅极触发电压:2 V
最大维持电流:300 mA最大漏电流:250 mA
通态非重复峰值电流:36000 A最大通态电压:2.05 V
最大通态电流:1990000 A最高工作温度:125 °C
最低工作温度:-40 °C断态重复峰值电压:1200 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
触发设备类型:SCRBase Number Matches:1

T1986N12TOF 数据手册

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Technische Information / Technical Information  
Netz-Thyristor  
Phase Control Thyristor  
N
T 1986 N 12...18  
Elektrische Eigenschften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung  
repetitive peak forward off-state and reverse voltages  
Tvj = - 40°C...Tvj max  
Tvj = - 40°C...Tvj max  
Tvj = + 25°C...Tvj max  
VDRM , VRRM  
1200  
1600  
1400  
1800  
V
V
Vorwärts-Stoßspitzensperrspannung  
VDSM  
1200  
1600  
1400  
1800  
V
V
non-repetitive peak foward off-state voltage  
Rückwärts-Stoßspitzensperrspannung  
non-repetitive peak reverse voltage  
VRSM  
1300  
1700  
1500  
1900  
V
V
Durchlaßstrom-Grenzeffektivwert  
RMSM on-state current  
ITRSMSM  
ITAVM  
ITSM  
4200  
A
Dauergrenzstrom  
T
T
C = 85 °C  
C = 65 °C  
1990  
2673  
A
A
average on-state current  
Stoßstrom-Grenzwert  
surge current  
Tvj = 25°C, tp = 10 ms  
Tvj = Tvj max, tp = 10 ms  
40000  
36000  
A
A
Grenzlastintegral  
I²t-value  
Tvj = 25°C, tp = 10ms  
Tvj = Tvj max, tp = 10ms  
I²t  
8000  
6480  
A²s*10³  
A²s*10³  
Kritische Stromsteilheit  
DIN IEC 747-6  
(diT/dt)cr  
200  
A/µs  
critical rate of rise of on-state current  
f=50 Hz, vL = 10V, iGM = 1 A  
diG/dt = 1 A/µs  
Kritische Spannungssteilheit  
Tvj = Tvj max, vD = 0,67 VDRM (dvD/dt)cr  
5.Kennbuchstabe/5th letter F  
1000  
V/µs  
critical rate of rise of off-state voltage  
Charakteristische Werte / Characteristic values  
Durchlaßspannung  
on-state voltage  
Tvj = Tvj max  
Tvj = Tvj max  
,
,
iT =  
iT =  
8 kA vT  
2 kA vT  
max.  
2,05  
1,20  
V
V
max.  
Schleusenspannung  
threshold voltage  
Tvj = Tvj max  
VT(TO)  
0,9  
V
mW  
Ersatzwiderstand  
slope resistance  
Tvj = Tvj max  
rT  
0,12  
Durchlaßkennlinie  
on-state voltage  
Tvj = Tvj max  
A= 1,4071E+00  
B= 4,7802E-05  
C= -1,3270E-01  
D= 1,6282E-02  
vT = A + B ×iT + C ×Ln(iT +1) + D × iT  
Zündstrom  
Tvj = 25°C, vD = 6 V  
Tvj = 25°C, vD = 6V  
IGT  
max.  
max.  
250  
2
mA  
V
gate trigger current  
Zündspannung  
VGT  
gate trigger voltage  
Nicht zündener Steuerstrom  
gate non-trigger current  
Tvj = Tvj max, vD = 6 V  
IGD  
max.  
max.  
10  
5
mA  
mA  
Tvj = Tvj max,vD = 0,5 VDRM  
Nicht zündene Steuerspannung  
gate non-trigger voltage  
Tvj = Tvj max,vD = 0,5 VDRM  
VGD  
max.  
max.  
max.  
0,25  
V
Haltestrom  
Tvj=25°C, vD = 6V, RA =5W IH  
300  
mA  
mA  
holding current  
Einraststrom  
Tvj=25°C,vD=6V,RGK>=10 W IL  
1500  
latching current  
iGM = 1 A, diG/dt = 1 A/µs  
tg = 20 µs  
Vorwärts- und Rückwärts-Sperrstrom  
forward off-state and reverse currents  
Tvj = Tvj max  
iD, iR  
max.  
max.  
250  
4
mA  
µs  
vD = VDRM, vR = VRRM  
Zündverzug  
DIN IEC 747-6  
Tvj = 25°C  
tgd  
gate controlled delay time  
iGM = 1 A, diG/dt = 1 A/µs  
BIP AM / 00-06-29, K.-A.Rüther  
A 14/00  
Seite/page 1  

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