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T1989N18TOF

更新时间: 2024-11-11 05:31:27
品牌 Logo 应用领域
英飞凌 - INFINEON 栅极
页数 文件大小 规格书
10页 266K
描述
Silicon Controlled Rectifier, 4200A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element

T1989N18TOF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:not_compliantHTS代码:8541.30.00.80
风险等级:5.84配置:SINGLE
最大直流栅极触发电流:250 mAJESD-30 代码:O-CXDB-X4
元件数量:1端子数量:4
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:4200 A
断态重复峰值电压:1800 V重复峰值反向电压:1800 V
表面贴装:YES端子形式:UNSPECIFIED
端子位置:UNSPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCR

T1989N18TOF 数据手册

 浏览型号T1989N18TOF的Datasheet PDF文件第2页浏览型号T1989N18TOF的Datasheet PDF文件第3页浏览型号T1989N18TOF的Datasheet PDF文件第4页浏览型号T1989N18TOF的Datasheet PDF文件第5页浏览型号T1989N18TOF的Datasheet PDF文件第6页浏览型号T1989N18TOF的Datasheet PDF文件第7页 
Datenblatt / Data sheet  
N
Netz-Thyristor  
Phase Control Thyristor  
T1989N  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
1200  
1400  
1600 V  
1800 V  
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max  
VDRM,VRRM  
repetitive peak forward off-state and reverse voltages
1200  
1400  
1600 V  
1800 V  
Vorwärts-Stoßspitzensperrspannung  
Tvj = -40°C... Tvj max  
Tvj = +25°C... Tvj max  
VDSM  
non-repetitive peak forward off-state voltage  
1300  
1500  
1700 V  
1900 V  
Rückwärts-Stoßspitzensperrspannung  
non-repetitive peak reverse voltage  
VRSM  
4200 A  
Durchlaßstrom-Grenzeffektivwert  
maximum RMS on-state current  
ITRMSM  
ITAVM  
1990 A  
2680 A  
Dauergrenzstrom  
average on-state current  
TC = 85 °C  
TC = 65 °C  
40000 A  
36000 A  
Stoßstrom-Grenzwert  
surge current  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
ITSM  
8000 10³ A²s  
6480 10³ A²s  
Grenzlastintegral  
I²t-value  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
I²t  
DIN IEC 60747-6  
200 A/µs  
Kritische Stromsteilheit  
(diT/dt)cr  
(dvD/dt)cr  
f = 50 Hz, iGM = 1 A, diG/dt = 1 A/µs  
critical rate of rise of on-state current  
1000 V/µs  
Kritische Spannungssteilheit  
critical rate of rise of off-state voltage  
Tvj = Tvj max, vD = 0,67 VDRM  
5.Kennbuchstabe / 5th letter F  
Charakteristische Werte / Characteristic values  
Durchlaßspannung  
on-state voltage  
max.  
max.  
2,05 V  
1,20 V  
Tvj = Tvj max , iT = 8 kA  
Tvj = Tvj max , iT = 2 kA  
vT  
0,90 V  
Schleusenspannung  
threshold voltage  
Tvj = Tvj max  
Tvj = Tvj max  
Tvj = Tvj max  
V(TO)  
rT  
0,12 mΩ  
Ersatzwiderstand  
slope resistance  
Durchlaßkennlinie  
on-state characteristic  
1000 A iT 10000 A  
A=  
B=  
C=  
D=  
1,407E+00  
4,780E-05  
-1,327E-01  
1,628E-02  
vT = A + B iT + C ln(iT + 1) + D  
iT  
Zündstrom  
Tvj = 25 °C, vD = 12V  
Tvj = 25 °C, vD = 12V  
IGT  
VGT  
IGD  
VGD  
IH  
max.  
250 mA  
gate trigger current  
Zündspannung  
gate trigger voltage  
max.  
2 V  
Nicht zündender Steuerstrom  
gate non-trigger current  
Tvj = Tvj max , vD = 12V  
Tvj = Tvj max , vD = 0,5 VDRM  
max.  
max.  
10 mA  
5 mA  
Nicht zündende Steuerspannung  
gate non-trigger voltage  
Tvj = Tvj max , vD = 0,5 VDRM  
Tvj = 25°C, vD = 12V  
max.  
0,25 V  
Haltestrom  
holding current  
max.  
300 mA  
Einraststrom  
latching current  
Tvj = 25°C, vD = 12V, RGK 10 Ω  
iGM = 1 A, diG/dt = 1 A/µs, tg = 20 µs  
IL  
max. 1500 mA  
Vorwärts- und Rückwärts-Sperrstrom  
forward off-state and reverse current  
Tvj = Tvj max  
iD, iR  
tgd  
max.  
max.  
250 mA  
4 µs  
vD = VDRM, vR = VRRM  
Zündverzug  
gate controlled delay time  
DIN IEC 60747-6  
Tvj = 25 °C, iGM = 1 A, diG/dt = 1 A/µs  
H.Sandmann  
date of publication: 2007-09-03  
prepared by:  
revision:  
1
approved by: J.Przybilla  
MA2-BE / 15 Aug 1995, K.-A. Rüther  
A 122/95  
Seite/page  
1/10  

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