Datasheet > T1851N

T1851N

更新时间： 2024-09-17 11:57:15

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描述
Phase Control Thyristor

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中文翻译

获取价格

数据手册

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T1851N 数据手册

Datenblatt / Data sheet

Netz-Thyristor

Phase Control Thyristor

T 1851N

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

6000

7000

6500 V

T_vj= -40°C... T_{vj max}

V_DRM,V_RRM

^PerK^iode^isn^cn^heda^Vt^oe^rwn^{ärts- und Rückwärts-Spitzensperrspannung}

^{repetitive peak forward off-state and re}E^verl^se^{e v}k^oltt^agr^eische Eigenschaften

3940 A

Durchlaßstrom-Grenzeffektivwert

maximum RMS on-state current

I_TRMSM

1850 A

2510 A

Dauergrenzstrom

average on-state current

T_C= 85 °C

T_C= 60 °C

I_TAVM

50000 A

48000 A

Stoßstrom-Grenzwert

surge current

T_vj= 25 °C, t_P= 10 ms

T_vj= T_{vj max}, t_P= 10 ms

I_TSM

12500 10³ A²s

11500 10³ A²s

Grenzlastintegral

I²t-value

T_vj= 25 °C, t_P= 10 ms

T_vj= T_{vj max}, t_P= 10 ms

I²t

DIN IEC 60747-6

f = 50 Hz, i_GM= 3 A, di_G/dt = 6 A/µs

300 A/µs

Kritische Stromsteilheit

critical rate of rise of on-state current

(di_T/dt)_cr

(dv_D/dt)_cr

2000 V/µs

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

T_vj= T_{vj max}, v_D= 0,67 V_DRM

5.Kennbuchstabe / 5^thletter H

Charakteristische Werte / Characteristic values

Durchlaßspannung

on-state voltage

typ.

max.

2,45 V

2,65 V

T_vj= T_{vj max}, i_T= 3000A

v_T

typ.

max.

1,2 V

1,22 V

Schleusenspannung

threshold voltage

T_vj= T_{vj max}

V_(TO)

typ. 0,417 mΩ

max. 0,477 mΩ

Ersatzwiderstand

slope resistance

T_vj= T_{vj max}

r_T

typ.

0,774

Durchlaßkennlinie

on-state characteristic

300A ≤ i_F≤ 3500A

T_vj= T_{vj max}

0,000186

-0,0199

0,0235

0,623

max.

v_T= A + B ⋅ i_T+ C ⋅ Ln(i_T+ 1) + D ⋅ i_T

0,000271

0,0346

0,0173

350

Zündstrom

gate trigger current

T_vj= 25°C, v_D= 12 V

I_GT

V_GT

I_GD

V_GD

I_H

max.

2,5

Zündspannung

gate trigger voltage

max.

Nicht zündender Steuerstrom

gate non-trigger current

T_vj= T_{vj max}, v_D= 12 V

T_vj= T_{vj max}, v_D= 0,5 V_DRM

max.

20 mA

10 mA

Nicht zündende Steuerspannung

gate non-trigger voltage

T_vj= T_{vj max}, v_D= 0,5 V_DRM

max.

0,4 V

350 mA

3 A

Haltestrom

holding current

T_vj= 25°C, v_D= 12 V

Einraststrom

latching current

T_vj= 25°C, v_D= 12 V, R_GK≥ 10 Ω

i_GM= 3 A, di_G/dt = 6 A/µs, t_g= 20 µs

I_L

Vorwärts- und Rückwärts-Sperrstrom

forward off-state and reverse current

T_vj= T_{vj max}

v_D= V_DRM, v_R= V_RRM

i_D, i_R

500 mA

2 µs

Zündverzug

DIN IEC 60747-6

t_gd

gate controlled delay time

T_vj= 25 °C,i_GM= 3 A, di_G/dt = 6 A/µs

C. Schneider

date of publication: 2006-05-05

revision:

prepared by:

approved by: J. Przybilla

BIP AM / SM PB, 2001-04-09, Przybilla J. / Keller

Seite/page

1/9

12 3 4 5 6 7...9

中文翻译

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与T1851N相关器件

型号	品牌	获取价格	描述	数据表
T1851N60TOH	INFINEON	获取价格	Silicon Controlled Rectifier, 3940A I(T)RMS, 1850000mA I(T), 6000V V(DRM), 6000V V(RRM), 1
T1851N60TOHXPSA1	INFINEON	获取价格	Silicon Controlled Rectifier, 3940A I(T)RMS, 6000V V(DRM), 6000V V(RRM), 1 Element,
T1851N65TOH	INFINEON	获取价格	Silicon Controlled Rectifier, 3940A I(T)RMS, 1850000mA I(T), 6500V V(DRM), 6500V V(RRM), 1
T1851N70TOH	INFINEON	获取价格	Silicon Controlled Rectifier, 3940A I(T)RMS, 1850000mA I(T), 7000V V(DRM), 7000V V(RRM), 1
T18561KT10	VISHAY	获取价格	RESISTOR, TRIMMER, CERMET, 15 TURN(S), 0.5 W, 560 ohm, 3/4 INCH, RECTANGULAR, 3 PINS, ROHS
T18562KT10	VISHAY	获取价格	RESISTOR, TRIMMER, CERMET, 15 TURN(S), 0.5 W, 5600 ohm, 3/4 INCH, RECTANGULAR, 3 PINS, ROH
T18563KT10	VISHAY	获取价格	RESISTOR, TRIMMER, CERMET, 15 TURN(S), 0.5 W, 56000 ohm, 3/4 INCH, RECTANGULAR, 3 PINS, RO
T185K10%TU	VISHAY	获取价格	Potentiometer, Cermet, 5000ohm, 10% +/-Tol, 7519,
T185K5%TU	VISHAY	获取价格	Potentiometer, Cermet, 5000ohm, 5% +/-Tol, 7519,
T1866N18TOF	INFINEON	获取价格	Silicon Controlled Rectifier, 4100A I(T)RMS, 2611000mA I(T), 1800V V(DRM), 1800V V(RRM), 1

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