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T1866N18TOF PDF预览

T1866N18TOF

更新时间: 2024-11-07 20:06:59
品牌 Logo 应用领域
英飞凌 - INFINEON 栅极
页数 文件大小 规格书
10页 266K
描述
Silicon Controlled Rectifier, 4100A I(T)RMS, 2611000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element,

T1866N18TOF 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
HTS代码:8541.30.00.80风险等级:5.84
标称电路换相断开时间:300 µs配置:SINGLE
关态电压最小值的临界上升速率:1000 V/us最大直流栅极触发电流:300 mA
最大直流栅极触发电压:2.5 V最大维持电流:300 mA
JESD-30 代码:O-CXDB-X4最大漏电流:250 mA
通态非重复峰值电流:40000 A元件数量:1
端子数量:4最大通态电流:2611000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:4100 A断态重复峰值电压:1800 V
重复峰值反向电压:1800 V子类别:Silicon Controlled Rectifiers
表面贴装:YES端子形式:UNSPECIFIED
端子位置:UNSPECIFIED触发设备类型:SCR
Base Number Matches:1

T1866N18TOF 数据手册

 浏览型号T1866N18TOF的Datasheet PDF文件第2页浏览型号T1866N18TOF的Datasheet PDF文件第3页浏览型号T1866N18TOF的Datasheet PDF文件第4页浏览型号T1866N18TOF的Datasheet PDF文件第5页浏览型号T1866N18TOF的Datasheet PDF文件第6页浏览型号T1866N18TOF的Datasheet PDF文件第7页 
Datenblatt / Data sheet  
N
Netz-Thyristor  
Phase Control Thyristor  
T1866N  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
1600  
1800  
2000 V  
2200 V  
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max  
VDRM,VRRM  
repetitive peak forward off-state and reverse voltages
1600  
1800  
2000 V  
2200 V  
Vorwärts-Stossspitzensperrspannung  
Tvj = -40°C... Tvj max  
Tvj = +25°C... Tvj max  
VDSM  
non-repetitive peak forward off-state voltage  
1700  
1900  
2100 V  
2300 V  
Rückwärts-Stossspitzensperrspannung  
non-repetitive peak reverse voltage  
VRSM  
4100 A  
Durchlassstrom-Grenzeffektivwert  
maximum RMS on-state current  
ITRMSM  
ITAVM  
1869 A  
2611 A  
Dauergrenzstrom  
average on-state current  
TC = 85 °C  
TC = 60 °C  
40000 A 1)  
35000 A  
Stossstrom-Grenzwert  
surge current  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
ITSM  
8000 10³ A²s  
6125 10³ A²s  
Grenzlastintegral  
I²t-value  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
I²t  
DIN IEC 60747-6  
200 A/µs  
Kritische Stromsteilheit  
(diT/dt)cr  
(dvD/dt)cr  
f = 50 Hz, iGM = 1 A, diG/dt = 1 A/µs  
critical rate of rise of on-state current  
1000 V/µs  
Kritische Spannungssteilheit  
critical rate of rise of off-state voltage  
Tvj = Tvj max, vD = 0,67 VDRM  
5.Kennbuchstabe / 5th letter F  
Charakteristische Werte / Characteristic values  
Durchlassspannung  
on-state voltage  
max.  
max.  
2,20 V  
1,26 V  
Tvj = Tvj max , iT = 8 kA  
Tvj = Tvj max , iT = 2 kA  
vT  
0,90 V  
Schleusenspannung  
threshold voltage  
Tvj = Tvj max  
Tvj = Tvj max  
Tvj = Tvj max  
V(TO)  
rT  
0,155 mΩ  
Ersatzwiderstand  
slope resistance  
Durchlasskennlinie  
on-state characteristic  
500 A iT 9000 A  
A=  
B=  
C=  
D=  
5,416E-01  
1,535E-04  
6,292E-02  
-1,530E-03  
vT = A + B iT + C ln(iT + 1) + D  
iT  
Zündstrom  
Tvj = 25 °C, vD = 12V  
Tvj = 25 °C, vD = 12V  
IGT  
VGT  
IGD  
VGD  
IH  
max.  
300 mA  
gate trigger current  
Zündspannung  
gate trigger voltage  
max.  
2,5 V  
Nicht zündender Steuerstrom  
gate non-trigger current  
Tvj = Tvj max , vD = 12V  
Tvj = Tvj max , vD = 0,5 VDRM  
max.  
max.  
10 mA  
5 mA  
Nicht zündende Steuerspannung  
gate non-trigger voltage  
Tvj = Tvj max , vD = 0,5 VDRM  
Tvj = 25°C, vD = 12V  
max.  
0,25 V  
Haltestrom  
holding current  
max.  
300 mA  
Einraststrom  
latching current  
Tvj = 25°C, vD = 12V, RGK 10 Ω  
iGM = 1 A, diG/dt = 1 A/µs, tg = 20 µs  
IL  
max. 1500 mA  
Vorwärts- und Rückwärts-Sperrstrom  
forward off-state and reverse current  
Tvj = Tvj max  
iD, iR  
tgd  
max.  
max.  
250 mA  
4 µs  
vD = VDRM, vR = VRRM  
Zündverzug  
gate controlled delay time  
DIN IEC 60747-6  
Tvj = 25 °C, iGM = 1 A, diG/dt = 1 A/µs  
1) Gehäusegrenzstrom IRSM(case) = 36kA (50Hz Sinus-Halbwelle) / Peak case non rupture current IRSM(case) = 36kA (50Hz sinusoidal half wave)  
H.Sandmann  
date of publication: 2006-11-29  
revision:  
prepared by:  
2
approved by: J.Przybilla  
BIP PPE4 / 2006-11-26, H.Sandmann  
A 03/06  
Seite/page  
1/10  

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