Datasheet > T14L1024N-10H

T14L1024N-10H

更新时间： 2024-09-18 22:09:03

品牌	Logo	应用领域
TMT		/
页数	文件大小	规格书
13页	89K
描述
128K X 8 HIGH SPEED CMOS STATIC RAM

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中文翻译

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数据手册

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T14L1024N-10H 数据手册

tmCH

T14L1024N

128K X 8 HIGH SPEED

CMOS STATIC RAM

SRAM

FEATURES

GENERAL DESCRIPTION

The T14L1024N is a one-megabit density, fast

static random access memory organized as

131,072 words by 8 bits. It is designed for

use in high performance memory applications

such as main memory storage and high speed

communication buffers. Fabricated using high

performance CMOS technology, access times

down to 10ns are achieved.

• Fast Address Access Times : 10/12/15ns

• Single 3.3V ±0.3V power supply

• Center power/ground pin configuration

• Low Power Consumption : 110/105/100mA

• TTL I/O compatible

• 2.0V data retention mode

• Automatic power-down when deselected

• Available packages :

BLOCK DIAGRAM

- 32-pin 300 mil and 400 mil SOJ

Vcc

Vss

- 32-pin TSOP 8x13.4mm and 8x20mm

- 36-Ball CSP (8x10mm)

CORE

ARRAY

DECODER

PART NUMBER EXAMPLES

PACKAGE

SOJ 300mil

SPEED

A16

T14L1024N-10J

10ns

T14L1024N-10W SOJ 400 mil

T14L1024N-10P TSOP 8x13.4mm

T14L1024N-10H TSOP 8x20mm

T14L1024N-10C 36-Ball CSP

I/O0

DATA I/O

I/O7

PIN DESCRIPTION

SYMBOL

A0 - A16

DESCRIPTION

Address Inputs

I/O0 - I/O7

Data Inputs/Outputs

Chip Select Inputs

Write Enable

Output Enable

Vcc

Vss

Power Supply

Ground

TM Technology Inc. reserves the right

to change products or specifications without notice.

P. 1

Publication Date: APR. 2002

Revision: C

12 3 4 5 6 7...13

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