是否无铅: | 不含铅 | 生命周期: | Transferred |
零件包装代码: | WAFER | 包装说明: | X-XUUC-N |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.40 | 风险等级: | 5.76 |
应用: | FAST RECOVERY | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | X-XUUC-N | JESD-609代码: | e3 |
元件数量: | 1 | 相数: | 1 |
最大输出电流: | 54 A | 封装主体材料: | UNSPECIFIED |
封装形状: | UNSPECIFIED | 封装形式: | UNCASED CHIP |
峰值回流温度(摄氏度): | 260 | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 200 V | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | NO LEAD |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | 35 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
T-DWEP29-12 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 60A, 1200V V(RRM), Silicon, WAFER | |
T-DWEP35-06 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 60A, 600V V(RRM), Silicon, WAFER | |
T-DWEP37-02 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 91A, 200V V(RRM), Silicon, WAFER | |
T-DWEP49-12 | LITTELFUSE |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 77A, 1200V V(RRM), Silicon, WAFER | |
T-DWEP50-10 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 82A, 1000V V(RRM), Silicon, WAFER | |
T-DWEP55-06 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 80A, 600V V(RRM), Silicon, WAFER | |
T-DWEP6-12 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, WAFER | |
T-DWEP69-12 | LITTELFUSE |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 123A, 1200V V(RRM), Silicon, WAFER | |
T-DWEP70-10 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 129A, 1000V V(RRM), Silicon, WAFER | |
T-DWEP75-06 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 162A, 600V V(RRM), Silicon, WAFER |