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SZDF3A6.8FUT1G PDF预览

SZDF3A6.8FUT1G

更新时间: 2024-11-30 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 局域网测试光电二极管瞬态抑制器
页数 文件大小 规格书
4页 50K
描述
ESD Protection Diodes, Dual, Common Anode

SZDF3A6.8FUT1G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:R-PDSO-G3Reach Compliance Code:compliant
Factory Lead Time:16 weeks风险等级:5.76
最大击穿电压:7.2 V最小击穿电压:6.4 V
击穿电压标称值:6.8 V最大钳位电压:16 V
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE最大正向电压 (VF):0.9 V
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:150 W
元件数量:2端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
最大功率耗散:0.2 W参考标准:IEC-61000-4-2
最大重复峰值反向电压:5 V最大反向电流:0.5 µA
反向测试电压:5 V表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

SZDF3A6.8FUT1G 数据手册

 浏览型号SZDF3A6.8FUT1G的Datasheet PDF文件第2页浏览型号SZDF3A6.8FUT1G的Datasheet PDF文件第3页浏览型号SZDF3A6.8FUT1G的Datasheet PDF文件第4页 
DF3A6.8FUT1  
Preferred Device  
Zener Transient Voltage  
Suppressor  
Dual Common Anode Zeners for ESD  
Protection  
http://onsemi.com  
These dual monolithic silicon zener diodes are designed for  
applications requiring transient overvoltage protection capability. They  
are intended for use in voltage and ESD sensitive equipment such as  
computers, printers, business machines, communication systems,  
medical equipment and other applications. Their dual junction common  
anode design protects two separate lines using only one package. These  
devices are ideal for situations where board space is at a premium.  
1
2
3
MARKING  
DIAGRAM  
Features  
Pb−Free Package is Available  
SC−70 Package Allows Two Separate Unidirectional Configurations  
Low Leakage < 1.0 mA @ 5.0 V  
Breakdown Voltage: 6.4−7.2 V @ 5.0 mA  
ESD Protection Meeting:16 kV Human Body Model  
30 kV Contact = IEC61000−4−2  
1
2
68  
SC−70/SOT−323  
CASE 419  
STYLE 4  
68  
= Specific Device Code  
= Date Code  
M
Peak Power: 24 W @ 1.0 ms (Unidirectional), per Figure 1  
Peak Power: 150 W @ 20 ms (Unidirectional), per Figure 2  
ORDERING INFORMATION  
Mechanical Characteristics  
Void Free, Transfer−Molded, Thermosetting Plastic Case  
Corrosion Resistant Finish, Easily Solderable  
Package Designed for Optimal Automated Board Assembly  
Small Package Size for High Density Applications  
Device  
Package  
Shipping  
DF3A6.8FUT1  
SC−70  
3000/Tape & Reel  
3000/Tape & Reel  
DF3A6.8FUT1G  
SC−70  
(Pb−Free)  
MAXIMUM RATINGS  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Rating  
Symbol  
Value  
Unit  
Steady State Power Dissipation  
Derate above 25°C (Note 1)  
P
D
200  
1.6  
°mW°  
mW/°C  
Preferred devices are recommended choices for future use  
and best overall value.  
Thermal Resistance Junction−to−Ambient  
R
618  
°C/W  
°C  
q
JA  
Operating Junction and Storage  
Temperature Range  
T , T  
J
− 55 to  
+150  
stg  
Peak Power Dissipation @ 1.0 ms  
P
20  
W
W
PK  
PK  
PP  
(Note 2) @ T = 25°C  
A
Peak Power Dissipation @ 20 ms (Note 3)  
P
V
150  
@ T = 25°C  
A
ESD Discharge  
kV  
MIL STD 883C − Method 3015−6  
IEC61000−4−2, Air Discharge  
IEC61000−4−2, Contact Discharge  
16  
30  
30  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
1. Mounted on FR−5 Board = 1.0 X 0.75 X 0.062 in.  
2. Non−repetitive pulse per Figure 1.  
3. Non−repetitive pulse per Figure 2.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
July, 2004 − Rev. 1  
DF3A6.8FUT1/D  
 

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