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SZDF6A6.8FUT1G PDF预览

SZDF6A6.8FUT1G

更新时间: 2024-11-30 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 局域网测试光电二极管瞬态抑制器
页数 文件大小 规格书
4页 54K
描述
Diode Array for ESD Protection

SZDF6A6.8FUT1G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:R-PDSO-G6Reach Compliance Code:compliant
风险等级:1.5其他特性:LOW CAPACITANCE
最大击穿电压:7.2 V最小击穿电压:6.4 V
击穿电压标称值:6.8 V配置:2 BANKS, COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
最大正向电压 (VF):1.25 VJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:75 W元件数量:4
端子数量:6最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性:UNIDIRECTIONAL最大功率耗散:0.385 W
参考标准:IEC-61000-4-2最大重复峰值反向电压:5 V
最大反向电流:1 µA反向测试电压:5 V
表面贴装:YES技术:AVALANCHE
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUALBase Number Matches:1

SZDF6A6.8FUT1G 数据手册

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DF6A6.8FUT1  
Quad Array for  
ESD Protection  
This quad voltage suppressor is designed for applications requiring  
transient overvoltage protection capability. It is intended for use in  
voltage and ESD sensitive equipment such as computers, printers,  
business machines, communication systems, medical equipment, and  
other applications. Its quad junction common anode design protects  
four separate lines using only one package. These devices are ideal for  
situations where board space is at a premium.  
http://onsemi.com  
1
2
3
6
5
4
Specification Features  
SC−88 Package Allows Four Separate Unidirectional Configurations  
Low Leakage < 1 mA @ 5 Volt  
Breakdown Voltage: 6.4 − 7.2 Volt @ 5 mA  
Low Capacitance (40 pF typical)  
ESD Protection Meeting 61000−4−2 Level 4  
MARKING  
DIAGRAM  
and 16 kV Human Body Model  
Pb−Free Package is Available  
6
1
Mechanical Characteristics  
SC−88  
CASE 419B−02  
Void Free, Transfer−Molded, Thermosetting Plastic Case  
Corrosion Resistant Finish, Easily Solderable  
Package Designed for Optimal Automated Board Assembly  
Small Package Size for High Density Applications  
M
68  
68 = Specific Device Code  
M = Date Code  
= Pb−Free Package  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
(Note: Microdot may be in either location.)  
Rating  
Symbol  
Value  
Unit  
Peak Power Dissipation @ 8 x 20 ms  
(Note 1)  
P
pk  
75  
Watts  
ORDERING INFORMATION  
Device  
Package  
Shipping  
Steady State Power Dissipation  
(Note 2)  
P
385  
mW  
D
DF6A6.8FUT1  
SC−88  
3000/Tape & Reel  
3000/Tape & Reel  
Thermal Resistance −  
Junction−to−Ambient  
Derate Above 25°C  
R
q
JA  
SC−88  
(Pb−Free)  
328  
3.0  
°C/W  
mW/°C  
DF6A6.8FUT1G  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Maximum Junction Temperature  
T
150  
°C  
°C  
Jmax  
Operating Junction and Storage  
Temperature Range  
T , T  
J
−55 to  
+150  
stg  
ESD Discharge  
V
PP  
kV  
MIL STD 883C − Method 3015−6  
IEC61000−4−2, Air Discharge  
IEC61000−4−2, Contact Discharge  
16  
16  
8
Lead Solder Temperature  
(10 seconds duration)  
T
L
260  
°C  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Per Waveform Figure 1  
2. Mounted on FR−5 Board = 1.0 X 0.75 X 0.062 in.  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
June, 2005 − Rev. 1  
DF6A6.8FUT1/D  
 

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