SAMWIN
SW30N06
N-channel MOSFET
BVDSS : 60V
TO-220
TO-251
TO-252
Features
ID
: 30A
■ High ruggedness
■ RDS(ON) (Max 0.036 Ω)@VGS=10V
■ Gate Charge (Typ 20nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
RDS(ON) : 0.036 ohm
1
2
1
2
1
3
2
3
3
2
1. Gate 2. Drain 3. Source
1
General Description
These N-channel enhancement mode power field effect transistors are produced using
SAMWIN’s proprietary, planar stripe, DMOS technology.
3
This advanced technology enable power MOSFET to have better characteristics, such as
fast switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers
Order Codes
Item
Sales Type
SW P 30N06
SW I 30N06
SW D 30N06
Marking
Package
TO-220
TO-251
TO-252
Packaging
TUBE
1
2
3
SW30N06
SW30N06
SW30N06
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDSS
ID
Drain to Source Voltage
60
30
V
A
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
14
A
IDM
VGS
EAS
Drain current pulsed
(note 1)
120
A
Gate to Source Voltage
± 20
178
V
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 2)
(note 1)
(note 3)
mJ
mJ
V/ns
W
EAR
dv/dt
4.0
7.0
44
PD
TSTG, TJ
TL
0.57
W/oC
oC
Operating Junction Temperature & Storage Temperature
-55 ~ + 150
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
oC
Thermal characteristics
Value
Typ.
Symbol
Parameter
Unit
Min.
Max.
2.85
50
Rthjc
Rthcs
Rthja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
oC/W
oC/W
oC/W
Thermal resistance, Junction to ambient
110
May. 2011. Rev. 3.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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