Datasheet > SUB75N08-09L-E3

SUB75N08-09L-E3

更新时间： 2024-11-29 19:44:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	60K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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技术参数
数据手册

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SUB75N08-09L-E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.83	配置：	Single
最大漏极电流 (Abs) (ID)：	75 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e3	湿度敏感等级：	1
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	250 W
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier	Base Number Matches：	1

SUB75N08-09L-E3 数据手册

_C/W

SUP/SUB75N08-09L

New Product

Vishay Siliconix

N-Channel 75-V (D-S), 175_C MOSFET

PRODUCT SUMMARY

V_(BR)DSS(V)

r_DS(on)(W)

I_D(A)

0.009 @ V = 10 V

"75

0.011 @ V = 4.5 V

TO-220AB

TO-263

DRAIN connected to TAB

D S

Top View

G D S

SUB75N08-09L

Top View

N-Channel MOSFET

SUP75N08-09L

ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25_C

"75

Continuous Drain Current (T = 175_C)

= 125_C

"66

"240

"75

280

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy

L = 0.1 mH

= 25_C (TO-220AB and TO-263)

250

Maximum Power Dissipation

= 25_C (TO-263)

3.7

Operating Junction and Storage Temperature Range

T , T

–55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

PCB Mount (TO-263)

62.5

0.6

Junction-to-Ambient

Junction-to-Case

thJA

thJC

Free Air (TO-220AB)

Notes

a. Package limited.

b. Duty cycle v 1%.

c. See SOA curve for voltage derating.

d. When mounted on 1” square PCB (FR-4 material).

Document Number: 70870

S-60951—Rev. A, 26-Apr-99

www.vishay.com S FaxBack 408-970-5600

2-1

12 3 4 5

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