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SUB85N10-10T4 PDF预览

SUB85N10-10T4

更新时间: 2024-11-16 14:45:03
品牌 Logo 应用领域
威世 - VISHAY 脉冲晶体管
页数 文件大小 规格书
6页 70K
描述
TRANS MOSFET N-CH 100V 85A 3PIN TO-263 - Rail/Tube

SUB85N10-10T4 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.82
雪崩能效等级(Eas):280 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):85 A最大漏源导通电阻:0.0105 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):240 A
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

SUB85N10-10T4 数据手册

 浏览型号SUB85N10-10T4的Datasheet PDF文件第2页浏览型号SUB85N10-10T4的Datasheet PDF文件第3页浏览型号SUB85N10-10T4的Datasheet PDF文件第4页浏览型号SUB85N10-10T4的Datasheet PDF文件第5页浏览型号SUB85N10-10T4的Datasheet PDF文件第6页 
SUP/SUB85N02-03  
Vishay Siliconix  
N-Channel 20-V (D-S) 175_C MOSFET  
PRODUCT SUMMARY  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)a  
0.003 @ V = 4.5 V  
GS  
85  
85  
85  
0.0034 @ V = 2.5 V  
GS  
20  
0.0038 @ V = 1.8 V  
GS  
D
TO-220AB  
TO-263  
G
DRAIN connected to TAB  
G
D S  
Top View  
Ordering Information:  
SUB85N02-03—E3 (Lead Free)  
G D  
Top View  
S
S
Ordering Information:  
SUP85N02-03—E3 (Lead Free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
"8  
DS  
V
V
GS  
T
= 25_C  
= 100_C  
85  
C
a
Continuous Drain Current (T = 175_C)  
I
D
J
T
85  
C
A
Pulsed Drain Current  
Avalanche Current  
I
240  
DM  
I
30  
AR  
b
Repetitive Avalanche Energy  
L = 0.1 mH  
E
45  
mJ  
W
AR  
a
Power Dissipation  
T
= 25_C  
P
250  
C
D
Operating Junction and Storage Temperature Range  
T , T  
55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
c
PCB Mount (TO-263)  
40  
62.5  
0.6  
Junction-to-Ambient  
Junction-to-Case  
R
R
thJA  
Free Air (TO-220AB)  
_C/W  
thJC  
Notes:  
a. See SOA curve for voltage derating.  
b. Duty cycle v 1%.  
c. When mounted on 1” square PCB (FR-4 material).  
Document Number: 71421  
S-32619—Rev. B, 29-Dec-03  
www.vishay.com  
1

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