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SUB85N08-08-E3 PDF预览

SUB85N08-08-E3

更新时间: 2024-11-16 14:45:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 88K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

SUB85N08-08-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.83配置:Single
最大漏极电流 (Abs) (ID):85 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e3湿度敏感等级:1
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):250 W
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrierBase Number Matches:1

SUB85N08-08-E3 数据手册

 浏览型号SUB85N08-08-E3的Datasheet PDF文件第2页浏览型号SUB85N08-08-E3的Datasheet PDF文件第3页浏览型号SUB85N08-08-E3的Datasheet PDF文件第4页浏览型号SUB85N08-08-E3的Datasheet PDF文件第5页浏览型号SUB85N08-08-E3的Datasheet PDF文件第6页 
                                                                                                                             
_C/W  
SUP/SUB85N08-08  
New Product  
Vishay Siliconix  
N-Channel 75-V (D-S) 175_C MOSFET  
PRODUCT SUMMARY  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
a
75  
0.008 @ V = 10 V  
GS  
85  
D
TO-220AB  
TO-263  
G
DRAIN connected to TAB  
G
D S  
Top View  
G D S  
S
SUB85N08-08  
Top View  
SUP85N08-08  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
75  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
GS  
V
V
"20  
a
T
= 25_C  
= 125_C  
85  
C
Continuous Drain Current (T = 175_C)  
I
J
D
a
T
C
67  
A
Pulsed Drain Current  
Avalanche Current  
I
240  
75  
DM  
I
AR  
b
Repetitive Avalanche Energy  
L = 0.1 mH  
E
280  
mJ  
W
AR  
c
T
C
= 25_C (TO-220AB and TO-263)  
250  
b
Maximum Power Dissipation  
P
D
d
T
A
= 25_C (TO-263)  
3.7  
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
d
PCB Mount (TO-263)  
40  
62.5  
0.6  
Junction-to-Ambient  
Junction-to-Case  
R
thJA  
thJC  
Free Air (TO-220AB)  
R
Notes  
a. Package limited.  
b. Duty cycle v 1%.  
c. See SOA curve for voltage derating.  
d. When mounted on 1” square PCB (FR-4 material).  
Document Number: 71165  
S-01884—Rev. B, 28-Aug-00  
www.vishay.com  
2-1  

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