Datasheet > SUB75N04-05L

SUB75N04-05L

更新时间： 2024-11-28 23:35:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	42K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 40V V(BR)DSS \| 75A I(D) \| TO-263AB

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数据手册

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SUB75N04-05L 数据手册

SUP/SUB75N04-05L

Vishay Siliconix

N-Channel 40-V (D-S), 175_C MOSFET, Logic Level

PRODUCT SUMMARY

V_(BR)DSS(V)

r_DS(on)(W)

I_D(A)

0.0055 @ V = 10 V

0.0065 @ V = 4.5 V

TO-220AB

TO-263

DRAIN connected to TAB

D S

Top View

G D S

SUB75N04-05L

Top View

N-Channel MOSFET

SUP75N04-05L

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Gate-Source Voltage

"20

= 25_C

Continuous Drain Current

(T = 175_C)

= 125_C

240

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy

L = 0.1 mH

280

= 25_C (TO-220AB and TO-263)

250

Power Dissipation

= 25_C (TO-263)

3.7

Operating Junction and Storage Temperature Range

T , T

–55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

PCB Mount (TO-263)

62.5

0.6

Junction-to-Ambient

Junction-to-Case

thJA

thJC

Free Air (TO-220AB)

_C/W

Notes

a. Package limited.

b. Duty cycle v 1%.

c. See SOA curve for voltage derating.

d. When mounted on 1” square PCB (FR-4 material).

Document Number: 70774

S-05110—Rev. F, 10-Dec-01

www.vishay.com

2-1

12 3 4

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