Datasheet > STW68N60M6

STW68N60M6

更新时间： 2023-12-20 18:46:00

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	470K
描述
N沟道600 V、35 mOhm典型值、63 A MDmesh M6功率MOSFET，TO-247封装

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STW68N60M6 数据手册

STW68N60M6

Electrical characteristics

Table 7. Source-drain diode

Test conditions

Symbol

Parameter

Min.

Typ.

Max.

Unit

Source-drain current

(1)

Source-drain current (pulsed)

Forward on voltage

252

1.6

SDM

(2)

= 0 V, I = 63 A

= 63 A, di/dt = 100 A/µs,

= 60 V (see

Reverse recovery time

Reverse recovery charge

308

4.3

µC

Figure 15. Test circuit for

inductive load switching and

diode recovery times)

Reverse recovery current

RRM

= 63 A, di/dt = 100 A/µs,

= 60 V, T = 150 °C

Reverse recovery time

504

Reverse recovery charge

10.8

µC

(see Figure 15. Test circuit for

inductive load switching and

diode recovery times)

Reverse recovery current

RRM

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

DS12066 - Rev 2

page 4/13

1 2 345 6 7...13

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