5秒后页面跳转
STTH60R04W PDF预览

STTH60R04W

更新时间: 2024-11-12 04:30:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管快恢复二极管超快恢复二极管局域网快速恢复二极管
页数 文件大小 规格书
7页 104K
描述
Ultrafast recovery diode

STTH60R04W 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DO-247包装说明:ROHS COMPLIANT, PLASTIC, DO-247, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:2.26Is Samacsys:N
其他特性:FREE WHEELING DIODE, SOFT FACTOR IS 0.4应用:ULTRA FAST RECOVERY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:650 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-40 °C最大输出电流:60 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:400 V
最大反向恢复时间:0.055 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STTH60R04W 数据手册

 浏览型号STTH60R04W的Datasheet PDF文件第2页浏览型号STTH60R04W的Datasheet PDF文件第3页浏览型号STTH60R04W的Datasheet PDF文件第4页浏览型号STTH60R04W的Datasheet PDF文件第5页浏览型号STTH60R04W的Datasheet PDF文件第6页浏览型号STTH60R04W的Datasheet PDF文件第7页 
STTH60R04  
Ultrafast recovery diode  
Main product characteristics  
IF(AV)  
VRRM  
Tj  
60 A  
400 V  
175° C  
0.95 V  
31 ns  
A
K
VF (typ)  
trr (typ)  
Features and benefits  
Very low switching losses  
A
K
High frequency and/or high pulsed current  
DO-247  
STTH60R04W  
operation  
High junction temperature  
Description  
The STTH60R04 series uses ST's new 400 V  
planar Pt doping technology. The STTH60R04 is  
specially suited for switching mode base drive and  
transistor circuits.  
Order codes  
Part Number  
STTH60R04W  
Marking  
Available in a through-the-hole package, this  
device is intended for use in low voltage, high  
frequency inverters, free wheeling and polarity  
protection.  
STTH60R04W  
Table 1.  
Symbol  
Absolute ratings (limiting values at 25° C, unless otherwise specified)  
Parameter  
Value  
Unit  
VRRM  
VRSM  
Repetitive peak reverse voltage  
400  
400  
V
V
Non repetitive peak reverse voltage  
IF(RMS) RMS forward current  
100  
A
IF(AV)  
IFRM  
IFSM  
Tstg  
Tj  
Average forward current, δ = 0.5  
Repetitive peak forward current  
Tc = 110° C  
60  
A
tp = 5 µs F = 1 kHz square  
375  
A
Surge non repetitive forward current tp = 10 ms Sinusoidal  
Storage temperature range  
650  
A
-65 to +175  
-40 to +175  
° C  
° C  
Operating junction temperature range  
March 2007  
Rev 1  
1/7  
www.st.com  

STTH60R04W 替代型号

型号 品牌 替代类型 描述 数据表
STTH61R04TV1 STMICROELECTRONICS

功能相似

Ultrafast recovery diode

与STTH60R04W相关器件

型号 品牌 获取价格 描述 数据表
STTH60RQ06 STMICROELECTRONICS

获取价格

600 V、60 A Turbo 2超快软恢复二极管
STTH60RQ06C STMICROELECTRONICS

获取价格

600 V, 2x30 A Turbo 2 Soft Ultrafast Recovery Diode
STTH60RQ06-M2Y STMICROELECTRONICS

获取价格

Automotive 600 V, 60 A Ultrafast Bridge Module
STTH60RQ06-Y STMICROELECTRONICS

获取价格

汽车级600 V、60 A超快软恢复二极管
STTH60SW03C STMICROELECTRONICS

获取价格

Turbo 2 ultrafast high voltage rectifier
STTH60SW03CW STMICROELECTRONICS

获取价格

Turbo 2 ultrafast high voltage rectifier
STTH60W02C STMICROELECTRONICS

获取价格

Turbo 2 ultrafast high voltage rectifier
STTH60W03C STMICROELECTRONICS

获取价格

300 V、60 A双路超高速整流二极管
STTH6102TV STMICROELECTRONICS

获取价格

HIGH EFFICIENCY ULTRAFAST DIODE
STTH6102TV1 STMICROELECTRONICS

获取价格

HIGH EFFICIENCY ULTRAFAST DIODE