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STTH6112TV PDF预览

STTH6112TV

更新时间: 2024-11-12 08:58:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管
页数 文件大小 规格书
8页 148K
描述
Ultrafast recovery - 1200 V diode

STTH6112TV 数据手册

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STTH6112TV  
Ultrafast recovery - 1200 V diode  
Main product characteristics  
K2  
A2  
K1  
A2  
IF(AV)  
VRRM  
Tj  
2 x 30 A  
1200 V  
150° C  
1.30 V  
45 ns  
K1  
A1  
A1  
VF (typ)  
trr (typ)  
K2  
STTH6112TV2  
STTH6112TV1  
A1  
A1  
K1  
K2  
Features and benefits  
A2  
Ultrafast, soft recovery  
K1  
A2  
K2  
Very low conduction and switching losses  
ISOTOP  
High frequency and/or high pulsed current  
operation  
High reverse voltage capability  
High junction temperature  
Insulated package:  
Order codes  
Part Number  
Marking  
Electrical insulation = 2500 V  
Capacitance < 45 pF  
RMS  
STTH6112TV1  
STTH6112TV2  
STTH6112TV1  
STTH6112TV2  
Description  
The high quality design of this diode has  
produced a device with low leakage current,  
regularly reproducible characteristics and intrinsic  
ruggedness. These characteristics make it ideal  
for heavy duty applications that demand long term  
reliability.  
Such demanding applications include industrial  
power supplies, motor control, and similar  
mission-critical systems that require rectification  
and freewheeling. These diodes also fit into  
auxiliary functions such as snubber, bootstrap,  
and demagnetization applications.  
The improved performance in low leakage  
current, and therefore thermal runaway guard  
band, is an immediate competitive advantage for  
this device.  
March 2006  
Rev 1  
1/8  
www.st.com  
8

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