STTH6112TV2

更新时间： 2024-02-09 19:19:17

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		二极管
页数	文件大小	规格书
8页	148K
描述
Ultrafast recovery - 1200 V diode

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STTH6112TV2 数据手册

STTH6112TV

Ultrafast recovery - 1200 V diode

Main product characteristics

I_F(AV)

V_RRM

T_j

2 x 30 A

1200 V

150° C

1.30 V

45 ns

V_F(typ)

t_rr(typ)

STTH6112TV2

STTH6112TV1

Features and benefits

■ Ultrafast, soft recovery

■ Very low conduction and switching losses

ISOTOP

■ High frequency and/or high pulsed current

operation

■ High reverse voltage capability

■ High junction temperature

■ Insulated package:

Order codes

Part Number

Marking

Electrical insulation = 2500 V

Capacitance < 45 pF

RMS

STTH6112TV1

STTH6112TV2

STTH6112TV1

STTH6112TV2

Description

The high quality design of this diode has

produced a device with low leakage current,

regularly reproducible characteristics and intrinsic

ruggedness. These characteristics make it ideal

for heavy duty applications that demand long term

reliability.

Such demanding applications include industrial

power supplies, motor control, and similar

mission-critical systems that require rectification

and freewheeling. These diodes also fit into

auxiliary functions such as snubber, bootstrap,

and demagnetization applications.

The improved performance in low leakage

current, and therefore thermal runaway guard

band, is an immediate competitive advantage for

this device.

March 2006

Rev 1

1/8

www.st.com

12 3 4 5 6 7 8

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STTH6112TV2 替代型号

型号	品牌	替代类型	描述	数据表
STTH6112TV1	STMICROELECTRONICS	类似代替	Ultrafast recovery - 1200 V diode

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