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STTH802CFP PDF预览

STTH802CFP

更新时间: 2024-09-24 22:33:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管功效局域网
页数 文件大小 规格书
8页 106K
描述
HIGH EFFICIENCY ULTRAFAST DIODE

STTH802CFP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220FP包装说明:TO-220FPAB, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.73Is Samacsys:N
应用:EFFICIENCY外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.95 V
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:50 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最大输出电流:4 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.02 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STTH802CFP 数据手册

 浏览型号STTH802CFP的Datasheet PDF文件第2页浏览型号STTH802CFP的Datasheet PDF文件第3页浏览型号STTH802CFP的Datasheet PDF文件第4页浏览型号STTH802CFP的Datasheet PDF文件第5页浏览型号STTH802CFP的Datasheet PDF文件第6页浏览型号STTH802CFP的Datasheet PDF文件第7页 
®
STTH802CT/CB/CFP  
HIGH EFFICIENCY ULTRAFAST DIODE  
MAIN PRODUCT CHARACTERISTICS  
A1  
A2  
IF(AV)  
2 x 4A  
200 V  
175 °C  
0.95 V  
20 ns  
K
VRRM  
Tj (max)  
VF (max)  
trr (max)  
FEATURES AND BENEFITS  
A2  
A2  
K
K
Suited for SMPS  
Low losses  
Low forward and reverse recovery times  
High surge current capability  
High junction temperature  
Insulated package: TO-220FPAB  
A1  
A1  
TO-220AB  
STTH802CT  
TO-220FPAB  
STTH802CFP  
K
DESCRIPTION  
Dual center tap rectifier suited for Switch Mode  
Power Supplies and High frequency DC to DC  
converters.  
A2  
K
A1  
Packaged in DPAK, TO-220AB or TO-220FPAB.  
This device is intended for use in low voltage, high  
frequency inverters, free wheeling and polarity  
protection applications.  
DPAK  
STTH802CB  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
200  
10  
Unit  
V
VRRM  
IF(RMS) RMS forward current  
TO-220AB / TO-220FPAB / DPAK  
A
IF(AV)  
Average forward  
current δ =0.5  
TO-220AB / DPAK  
TO-220FPAB  
Tc = 155°C Per diode  
Tc = 145°C  
4
A
TO-220AB / DPAK  
TO-220FPAB  
Tc = 150°C Per device  
Tc = 130°C  
8
A
A
IFSM  
Tstg  
Tj  
Surge non repetitive forward current  
Storage temperature range  
tp = 10 ms Sinusoidal  
50  
- 65 + 175 °C  
175 °C  
Maximum operating junction temperature  
April 2002 - Ed: 1A  
1/8  

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