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STTH806DI

更新时间: 2024-02-03 03:27:02
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管
页数 文件大小 规格书
5页 61K
描述
8A, 600V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, INSULATED PACKAGE-2

STTH806DI 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:11 weeks风险等级:0.67
应用:ULTRA FAST RECOVERY外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):3.6 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:80 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.03 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn) - annealed端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STTH806DI 数据手册

 浏览型号STTH806DI的Datasheet PDF文件第2页浏览型号STTH806DI的Datasheet PDF文件第3页浏览型号STTH806DI的Datasheet PDF文件第4页浏览型号STTH806DI的Datasheet PDF文件第5页 
®
STTH806TTI  
TURBOSWITCH Tandem 600V ULTRA-FAST BOOST DIODE  
MAJOR PRODUCTS CHARACTERISTICS  
IF(AV)  
VRRM  
8 A  
600 V (in series)  
150 °C  
1
2
3
Tj (max)  
VF (max)  
IRM (typ.)  
2.6 V  
4 A  
3
2
1
Insulated TO-220AB  
FEATURES AND BENEFITS  
DESCRIPTION  
The TURBOSWITCH "H" is an ultra high  
performance diode composed of two 300V dice  
in series. TURBOSWITCH "H" family drastically  
cuts losses in the associated MOSFET when run at  
high dIF/dt.  
ESPECIALLY SUITED AS BOOST DIODE IN  
CONTINUOUS MODE POWER FACTOR  
CORRECTORS AND HARD SWITCHING  
CONDITIONS.  
DESIGNED FOR HIGH DI/DT OPERATION.  
ULTRA-FAST RECOVERY CURRENT TO  
COMPETE WITH GaAs DEVICES. SIZE  
DIMINUTION OF MOSFET AND HEATSINKS  
ALLOWED.  
INTERNAL CERAMIC INSULATED PACKAGE  
ALLOWS FLEXIBLE HEATSINKING ON  
COMMON OR SEPARATE HEATSINK.  
MATCHED DIODES FOR TYPICAL PFC  
APPLICATION WITHOUT VOLTAGE BALANCE  
NETWORK.  
INSULATED VERSION: :  
Insulated voltage = 2500 V(RMS)  
Capacitance = 7 pF  
ABSOLUTE RATINGS (limiting values for both diodes in series)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
VRRM  
600  
V
IF(RMS)  
IFSM  
Tstg  
14  
80  
A
A
RMS forward current  
Surge non repetitive forward current  
Storage temperature range  
tp = 10 ms sinusoidal  
-65 +150  
+ 150  
°C  
°C  
Tj  
Maximum operating junction temperature  
TM: TURBOSWITCH is a trademark of STMicroelectronics  
November 1999 - Ed: 3A  
1/5  

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