STTH806F

更新时间： 2024-01-26 06:05:13

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		二极管
页数	文件大小	规格书
5页	61K
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数据手册

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STTH806F 数据手册

STTH806TTI

TURBOSWITCH Tandem 600V ULTRA-FAST BOOST DIODE

MAJOR PRODUCTS CHARACTERISTICS

I_F(AV)

V_RRM

8 A

600 V (in series)

150 °C

Tj (max)

V_F(max)

I_RM(typ.)

2.6 V

4 A

Insulated TO-220AB

FEATURES AND BENEFITS

DESCRIPTION

The TURBOSWITCH "H" is an ultra high

performance diode composed of two 300V dice

in series. TURBOSWITCH "H" family drastically

cuts losses in the associated MOSFET when run at

high dI_F/dt.

ESPECIALLY SUITED AS BOOST DIODE IN

CONTINUOUS MODE POWER FACTOR

CORRECTORS AND HARD SWITCHING

CONDITIONS.

DESIGNED FOR HIGH DI/DT OPERATION.

ULTRA-FAST RECOVERY CURRENT TO

COMPETE WITH GaAs DEVICES. SIZE

DIMINUTION OF MOSFET AND HEATSINKS

ALLOWED.

INTERNAL CERAMIC INSULATED PACKAGE

ALLOWS FLEXIBLE HEATSINKING ON

COMMON OR SEPARATE HEATSINK.

MATCHED DIODES FOR TYPICAL PFC

APPLICATION WITHOUT VOLTAGE BALANCE

NETWORK.

INSULATED VERSION: :

Insulated voltage = 2500 V_(RMS)

Capacitance = 7 pF

ABSOLUTE RATINGS (limiting values for both diodes in series)

Symbol

Parameter

Repetitive peak reverse voltage

Value

Unit

V_RRM

600

I_F(RMS)

I_FSM

T_stg

RMS forward current

Surge non repetitive forward current

Storage temperature range

tp = 10 ms sinusoidal

-65 +150

+ 150

°C

Maximum operating junction temperature

TM: TURBOSWITCH is a trademark of STMicroelectronics

November 1999 - Ed: 3A

1/5

12 3 4 5

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