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STTH806DTI PDF预览

STTH806DTI

更新时间: 2024-11-18 04:30:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管
页数 文件大小 规格书
5页 42K
描述
Tandem 600V HYPERFAST BOOST DIODE

STTH806DTI 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AC包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:1.71应用:HYPER FAST RECOVERY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2.4 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
最大非重复峰值正向电流:180 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.03 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn) - annealed
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STTH806DTI 数据手册

 浏览型号STTH806DTI的Datasheet PDF文件第2页浏览型号STTH806DTI的Datasheet PDF文件第3页浏览型号STTH806DTI的Datasheet PDF文件第4页浏览型号STTH806DTI的Datasheet PDF文件第5页 
®
STTH806DTI  
Tandem 600V HYPERFAST BOOST DIODE  
MAJOR PRODUCTS CHARACTERISTICS  
1
2
IF(AV)  
VRRM  
8 A  
600 V  
150 °C  
2.4 V  
4 A  
Tj (max)  
VF (max)  
IRM (typ.)  
trr (typ.)  
13 ns  
2
1
FEATURES AND BENEFITS  
Insulated TO-220AB  
ESPECIALLY SUITED AS BOOST DIODE IN  
CONTINUOUS MODE POWER FACTOR  
CORRECTORS AND HARD SWITCHING  
CONDITIONS  
DESIGNED FOR HIGH DI/DT OPERATION.  
HYPERFAST RECOVERY CURRENT TO  
COMPETE WITH SIC DEVICES. ALLOWS  
DOWNSIZING OF MOSFET AND HEATSINKS  
INTERNAL CERAMIC INSULATED DEVICES  
WITH EQUAL THERMAL CONDITIONS FOR  
BOTH 300V DIODES  
DESCRIPTION  
The TURBOSWITCH “H” is an ultra high  
performance diode composed of two 300V dice in  
series. TURBOSWITCH “H” family drastically cuts  
losses in the associated MOSFET when run at  
high dIF/dt.  
INSULATION  
(2500VRMS  
)
ALLOWS  
PLACEMENT ON SAME HEATSINK AS  
MOSFET AND FLEXIBLE HEATSINKING ON  
COMMON OR SEPARATE HEATSINK  
STATIC AND DYNAMIC EQUILIBRIUM OF  
INTERNAL DIODES ARE WARRANTED BY  
DESIGN  
PACKAGE CAPACITANCE: C=7pF  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
VRRM  
600  
V
Repetitive peak reverse voltage  
RMS forward current  
IF(RMS)  
IFSM  
Ipeak  
Tstg  
14  
80  
A
A
Surge non repetitive forward current  
Peak current waveform  
tp = 10 ms sinusoidal  
17  
A
δ = 0.15 Tc = 130°C  
-65 +150  
+ 150  
°C  
°C  
Storage temperature range  
Tj  
Maximum operating junction temperature  
October 2003 - Ed: 2A  
1/5  

STTH806DTI 替代型号

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