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STTH810 PDF预览

STTH810

更新时间: 2024-11-02 03:41:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管
页数 文件大小 规格书
11页 191K
描述
Ultrafast recovery - high voltage diode

STTH810 数据手册

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STTH810  
Ultrafast recovery - high voltage diode  
Main product characteristics  
A
K
IF(AV)  
VRRM  
Tj  
8 A  
1000 V  
175° C  
1.30 V  
47 ns  
VF (typ)  
trr (typ)  
A
A
K
K
Features and benefits  
TO-220AC  
STTH810D  
TO-220FPAC  
STTH810FP  
Ultrafast, soft recovery  
Very low conduction and switching losses  
High frequency and/or high pulsed current  
operation  
K
High reverse voltage capability  
High junction temperature  
A
A
Insulated packages:  
NC  
– TO-220Ins  
K
– Electrical insulation = 2500 VRMS  
Capacitance = 7 pF  
– TO-220FPAC  
D2PAK  
STTH810G  
TO-220Ins  
STTH810DI  
Electrical insulation = 2500 VRMS  
Capacitance = 12 pF  
Order codes  
Description  
Part Number  
Marking  
The high quality design of this diode has  
produced a device with low leakage current,  
regularly reproducible characteristics and intrinsic  
ruggedness. These characteristics make it ideal  
for heavy duty applications that demand long term  
reliability.  
STTH810D  
STTH810G  
STTH810D  
STTH810G  
STTH810G  
STTH810FP  
STTH810DI  
STTH810G-TR  
STTH810FP  
STTH810DI  
Such demanding applications include industrial  
power supplies, motor control, and similar  
mission-critical systems that require rectification  
and freewheeling. These diodes also fit into  
auxiliary functions such as snubber, bootstrap,  
and demagnetization applications.  
The improved performance in low leakage  
current, and therefore thermal runaway guard  
band, is an immediate competitive advantage for  
this device.  
March 2006  
Rev 1  
1/11  
www.st.com  
11  

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