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STTH6102TV1 PDF预览

STTH6102TV1

更新时间: 2024-09-24 03:41:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管测试功效局域网
页数 文件大小 规格书
5页 90K
描述
HIGH EFFICIENCY ULTRAFAST DIODE

STTH6102TV1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:ISOTOP包装说明:ISOTOP, 4 PIN
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.82Is Samacsys:N
其他特性:HIGH SURGE CAPABILITY应用:EFFICIENCY
外壳连接:ISOLATED配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.81 VJESD-30 代码:R-PUFM-X4
最大非重复峰值正向电流:400 A元件数量:2
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向电流:250 µA
最大反向恢复时间:0.03 µs反向测试电压:200 V
子类别:Other Diodes表面贴装:NO
端子面层:Nickel (Ni)端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STTH6102TV1 数据手册

 浏览型号STTH6102TV1的Datasheet PDF文件第2页浏览型号STTH6102TV1的Datasheet PDF文件第3页浏览型号STTH6102TV1的Datasheet PDF文件第4页浏览型号STTH6102TV1的Datasheet PDF文件第5页 
®
STTH6102TV  
HIGH EFFICIENCY ULTRAFAST DIODE  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
2 x 30 A  
200 V  
A1  
A2  
K1  
K2  
Tj (max)  
VF (typ)  
trr (typ)  
150 °C  
0.70 V  
25 ns  
K1  
A1  
FEATURES AND BENEFITS  
Suited for welding and high power equipment  
Very low forward losses  
Low recovery times  
High surge current capability  
Insulated:  
K2  
A2  
ISOTOP  
STTH6102TV1  
Insulating voltage = 2500 VRMS  
Capacitance < 45 pF  
Low leakage current  
DESCRIPTION  
Dual center tap rectifier suited for welding  
equipment and high power industrial application.  
Packaged in ISOTOP, this device is intended for  
use in the secondary rectification of power  
converters.  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
200  
80  
Unit  
V
VRRM  
IF(RMS) RMS forward current  
Per diode  
Per diode  
A
IF(AV)  
IFSM  
Tstg  
Tj  
Average forward current δ =0.5  
Tc = 115°C  
30  
A
Surge non repetitive forward current  
Storage temperature range  
tp = 10 ms Sinusoidal per diode  
400  
A
- 55 + 150 °C  
150 °C  
Maximum operating junction temperature  
February 2004 - Ed: 1  
1/5  

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